Boron diffusion in silicon devices

Patent · Tue Sep 07 00:00:00 EDT 2010

OSTI ID:1014672

Rohatgi, Ajeet ^[1]; Kim, Dong Seop ^[1]; Nakayashiki, Kenta ^[2]; Rounsaville, Brian ^[3]

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1. Atlanta, GA
2. Smyrna, GA
3. Stockbridge, GA

Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

• Research Organization: Georgia Institute of Technology, Atlanta, GA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: FC36-00GO10600
• Assignee: Georgia Tech Research Corporation (Atlanta, GA)
• Patent Number(s): 7,790,574
• Application Number: US Patent Application 11/301,527
• OSTI ID: 1014672
• Country of Publication: United States
• Language: English