skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Isolating and moving single atoms using silicon nanocrystals

Patent ·
OSTI ID:1014668

A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,790,051
Application Number:
US Patent Application 11/931,155
OSTI ID:
1014668
Country of Publication:
United States
Language:
English

References (17)

Correlation between luminescence and structural properties of Si nanocrystals journal February 2000
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides journal April 2004
A silicon-based nuclear spin quantum computer journal May 1998
Ultra-high-Q toroid microcavity on a chip journal February 2003
Towards the fabrication of phosphorus qubits for a silicon quantum computer journal September 2001
Single-photon sources journal April 2005
Charge and Photoionization Properties of Single Semiconductor Nanocrystals journal March 2001
Global control and fast solid-state donor electron spin quantum computing journal July 2005
Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides journal July 2007
Experimental Studies of Photoluminescence in Mn-Ion Implanted Silicon Rich Oxide Thin Film journal January 2006
Single-photon sources journal May 2005
Scanning capacitance microscopy and -spectroscopy on SiO2 films with embedded Ge and Si nanoclusters journal April 2004
Models for quantitative charge imaging by atomic force microscopy journal September 2001
Erbium in silicon journal November 2005
Microfabricated high-finesse optical cavity with open access and small volume journal November 2005
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication journal October 2003
Progress in silicon-based quantum computing
  • Clark, R. G.; Brenner, R.; Buehler, T. M.
  • Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, Vol. 361, Issue 1808 https://doi.org/10.1098/rsta.2003.1221
journal July 2003

Similar Records

Accessing crystal–crystal interaction forces with oriented nanocrystal atomic force microscopy probes
Journal Article · Sat Sep 01 00:00:00 EDT 2018 · Nature Protocols · OSTI ID:1014668

Functional Scanning Probe Imaging of Nanostructured Solar Energy Materials
Journal Article · Tue Aug 30 00:00:00 EDT 2016 · Accounts of Chemical Research · OSTI ID:1014668

Fabrication and electronic transport studies of single nanocrystal systems
Thesis/Dissertation · Thu May 01 00:00:00 EDT 1997 · OSTI ID:1014668

Related Subjects