Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology. Annual subcontract report, 1 August 1991--31 July 1992
- Spire Corp., Bedford, MA (United States)
This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, {approximately} 1 {times} 10{sup 5} cm{sup {minus}5}, as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 {times}10{sup 7} cm{sup {minus}2}. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Spire Corp., Bedford, MA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 10141157
- Report Number(s):
- NREL/TP-451-5353; ON: DE93000096
- Resource Relation:
- Other Information: PBD: Apr 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
GALLIUM ARSENIDES
DEPOSITION
ALUMINIUM ARSENIDES
PROGRESS REPORT
SILICON
SUBSTRATES
EFFICIENCY
COST
PHOTOVOLTAIC CONVERSION
NUCLEATION
DEFECTS
MICROSTRUCTURE
140501
360601
360602
PREPARATION AND MANUFACTURE
STRUCTURE AND PHASE STUDIES