Method of transferring strained semiconductor structure
- Santa Fe, NM
- College Station, TX
The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC51-06NA25396
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM
- Patent Number(s):
- 7,638,410
- Application Number:
- US Patent Application 11/641,471
- OSTI ID:
- 1013558
- Country of Publication:
- United States
- Language:
- English
Epitaxial layer transfer by bond and etch back of porous Si
|
journal | April 1994 |
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
|
journal | January 1986 |
Similar Records
Three dimensional strained semiconductors
Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies