Large area, low capacitance Si(Li) detectors for high rate x-ray applications
Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication procedures, I-V and C-V characteristics, noise performance, and spectral response to 2-60 keV x-rays are described.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10133904
- Report Number(s):
- LBL-32243; CONF-921005-26; ON: DE93007661
- Resource Relation:
- Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference,Orlando, FL (United States),25-31 Oct 1992; Other Information: PBD: Oct 1992
- Country of Publication:
- United States
- Language:
- English
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