Ion-irradiation-induced densification of zirconia sol-gel thin films

Conference · Tue Feb 01 00:00:00 EST 1994

OSTI ID:10129902

Levine, T E; Giannelis, E P ^[1]; Kodali, P; Tesmer, J; Nastasi, M ^[2]; Mayer, J W ^[3]

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1. Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
2. Los Alamos National Lab., NM (United States)
3. Arizona State Univ., Tempe, AZ (United States)

We have investigated the densification behavior of sol-gel zirconia films resulting from ion irradiation. Three sets of films were implanted with neon, krypton, or xenon. The ion energies were chosen to yield approximately constant energy loss through the film and the doses were chosen to yield similar nuclear energy deposition. Ion irradiation of the sol-gel films resulted in carbon and hydrogen loss as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Although the densification was hypothesized to result from target atom displacement, the observed densification exhibits a stronger dependence on electronic energy deposition.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: Department of Defense, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 10129902
• Report Number(s): LA-UR-94-310; CONF-931108-87; ON: DE94006248; CNN: Contract DAAL03-89-K-0154
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ZIRCONIUM OXIDES
THIN FILMS
DENSITY
ION IMPLANTATION
SOL-GEL PROCESS
ION BEAMS
360206
RADIATION EFFECTS