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Title: Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions

Abstract

Diamond films are predominantly grown using one percent or so of a hydrocarbon precursor in hydrogen gas. Hydrogen is generally believed to be necessary for the diamond thin film growth process. However, hydrogen in varying amounts is inevitably incorporated in the growing diamond lattice, leading to structural defects. The authors report here for the first time the successful growth of diamond films using fullerene precursors in an argon microwave plasma, a unique development achieved without the addition of hydrogen or oxygen. It is speculated that collisional fragmentation of C{sub 60} to give C{sub 2} could be responsible for the high growth rate of the very fine grained diamond films.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10111257
Report Number(s):
ANL/CHM/PP-81072
ON: DE94004582; TRN: 94:002069
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Oct 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FULLERENES; METALLURGICAL EFFECTS; DIAMONDS; PRECURSOR; PHYSICAL VAPOR DEPOSITION; STRUCTURAL CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; 360601; 360602; PREPARATION AND MANUFACTURE; STRUCTURE AND PHASE STUDIES

Citation Formats

Gruen, D M, Liu, S, Krauss, A R, Luo, J, and Pan, X. Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions. United States: N. p., 1993. Web. doi:10.2172/10111257.
Gruen, D M, Liu, S, Krauss, A R, Luo, J, & Pan, X. Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions. United States. https://doi.org/10.2172/10111257
Gruen, D M, Liu, S, Krauss, A R, Luo, J, and Pan, X. 1993. "Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions". United States. https://doi.org/10.2172/10111257. https://www.osti.gov/servlets/purl/10111257.
@article{osti_10111257,
title = {Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions},
author = {Gruen, D M and Liu, S and Krauss, A R and Luo, J and Pan, X},
abstractNote = {Diamond films are predominantly grown using one percent or so of a hydrocarbon precursor in hydrogen gas. Hydrogen is generally believed to be necessary for the diamond thin film growth process. However, hydrogen in varying amounts is inevitably incorporated in the growing diamond lattice, leading to structural defects. The authors report here for the first time the successful growth of diamond films using fullerene precursors in an argon microwave plasma, a unique development achieved without the addition of hydrogen or oxygen. It is speculated that collisional fragmentation of C{sub 60} to give C{sub 2} could be responsible for the high growth rate of the very fine grained diamond films.},
doi = {10.2172/10111257},
url = {https://www.osti.gov/biblio/10111257}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Oct 01 00:00:00 EDT 1993},
month = {Fri Oct 01 00:00:00 EDT 1993}
}