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Title: Rapid thermal processing of high-efficiency silicon solar cells with controlled in-situ annealing

Conference ·
OSTI ID:10107828
; ; ;  [1];  [2];  [3]
  1. Georgia Institute of Technology, Atlanta, GA (United States). Univ. Center of Excellence for Photovoltaics Research and Education
  2. Sandia National Labs., Albuquerque, NM (United States)
  3. EBARA Solar, Inc., Large, PA (United States)

Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using simplified, cost-effective rapid thermal processing (RTP). These represent the highest reported efficiencies for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. Appropriate diffusion temperature coupled with the added in-situ anneal resulted in suitable minority-carrier lifetime and diffusion profiles for high-efficiency cells. The cooling rate associated with the in-situ anneal can improve the lifetime and lower the reverse saturation current density (J{sub 0}), however, this effect is material and base resistivity specific. PECVD antireflection (AR) coatings provided low reflectance and efficient front surface and bulk defect passivation. Conventional cells fabricated on FZ silicon by furnace diffusions and oxidations gave an efficiency of 18.8% due to greater short wavelength response and lower J{sub 0}.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
10107828
Report Number(s):
SAND-94-3077C; CONF-941203-12; ON: DE95004729; TRN: 95:001008
Resource Relation:
Conference: 1. world conference on photovoltaic energy conversion,Waikoloa, HI (United States),5-9 Dec 1994; Other Information: PBD: [1995]
Country of Publication:
United States
Language:
English

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