1993 annual final progress report: July 1992 through June 1993
- Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering
This is the first annual report since the Inauguration of the University Center of Excellence for Photovoltaics Research and Development (UCEP) at Georgia Tech. The essential objective of the Center is to improve the fundamental understanding of the science and technology of advanced PV devices and materials, to provide training and enrich the educational experience of students in the field, and to increase US competitiveness by providing guidelines to industry and DOE for achieving cost-effective and high efficiency PV devices. These objectives are to be accomplished through a combination of research and education. This report summarizes the technical accomplishments, including modeling, processing, and characterization of cast multicrystalline silicon solar cells; use of modeling and PCD measurements to develop a road map for progressing toward 20% multicrystalline and 25% single crystalline cells; the development of a novel PECVD SiN/SiO{sub 2} AR coating that also provides good surface passivation; PECVD deposited SiO{sub 2} films with record low S and D{sub it} at the SiO{sub 2}/Si interface; and educational activities and accomplishments.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10102028
- Report Number(s):
- SAND-94-2399; ON: DE95004272; BR: GB0103012; TRN: AHC29501%%92
- Resource Relation:
- Other Information: PBD: Nov 1994
- Country of Publication:
- United States
- Language:
- English
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