Trench process and structure for backside contact solar cells with polysilicon doped regions
Patent
·
OSTI ID:1009830
- Woodside, CA
- Menlo Park, CA
- Campbell, CA
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
- Research Organization:
- SunPower Corporation (San Jose, CA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 7,851,698
- Application Number:
- 12/392,923
- OSTI ID:
- 1009830
- Country of Publication:
- United States
- Language:
- English
Development of chip-size silicon solar cells
|
conference | January 2000 |
A mirror-less design for micro-concentrator modules
|
conference | January 2000 |
A flat-plate concentrator: micro-concentrator design overview
|
conference | January 2000 |
Simplified backside-contact solar cells
|
journal | January 1990 |
Similar Records
Trench process and structure for backside contact solar cells with polysilicon doped regions
Trench process and structure for backside contact solar cells with polysilicon doped regions
Fabrication of solar cells with counter doping prevention
Patent
·
Tue May 28 00:00:00 EDT 2013
·
OSTI ID:1009830
Trench process and structure for backside contact solar cells with polysilicon doped regions
Patent
·
Tue Mar 18 00:00:00 EDT 2014
·
OSTI ID:1009830
Fabrication of solar cells with counter doping prevention
Patent
·
Tue Feb 19 00:00:00 EST 2013
·
OSTI ID:1009830