Low temperature reactive bonding
Disclosed is a joining technique that requires no external heat source and generates very little heat. It involves the reaction of thin multilayered films deposited on faying (closely fit or joining) surfaces to create a stable compound that functions as an intermediate or braze material in order to create a high strength bond. While high temperatures are reached in the reaction of the multilayer film, very little heat is generated because the films are very thin. It is essentially a room temperature joining process. It can be used for joining silicon wafers and integrated circuits.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 100316
- Report Number(s):
- UCRL-ID-121314; PATENTS-US-A8145568; ON: DE95017073
- Resource Relation:
- Other Information: PBD: 23 Jun 1995
- Country of Publication:
- United States
- Language:
- English
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