769 Search Results

In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.

The Fast Modular Reactor (FMR) is a 100-MW(thermal) gas-cooled fast reactor being developed by General Atomics Electromagnetic System with the goal of developing a FMR for flexible and dispatchable power to the U.S. electricity market in the mid-2030s. The conceptual design aims to develop and verify simplified design features. These include an inert helium gas coolant, pellet-loaded fuel rods, installations with air cooling as ultimate heat sink, and small and passive heat removal systems. The goal is to ensure the development of a safe, maintainable, cost-effective, and distributed nuclear energy-generating station. The baseline technologies selected to achieve this goal are a helium coolant that is an inert gas with no chemical reaction with structural components, not activated, single phase, enabling high-temperature operation and a high thermal efficiency Brayton cycle; conventional uranium dioxide (UO₂) fuel, which is the most widely used and well-known fuel material, capable of high burnup (100 MWd/kg) and a long fuel life; and silicon carbide composite (SiGA®) cladding and internal structures that are chemically inert in the helium environment, exceptionally radiation tolerant, and being derisked by accident tolerant fuel technology development. Further, the reactor was specifically designed with passive safety features, including high-temperature in-core materials and a reactor vessel cooling system consisting of cooling panels of naturally circulating water. The passive safety of the core was confirmed for the depressurized loss-of–forced cooling accident, which showed the peak cladding temperature at ~1600°C during the transient, which is below the current design limit of 1800°C. The conceptual design of the FMR has been conducted for the reactor system, vessel system, generator and turbomachine, instrumentation and control, residual heat removal system, plant service system, and containment, as well as pre-application licensing documents.

ThinSiC is a startup company out of Santa Clara, California developing technologies for next generation high performance Wide Bandgap power electronics. Recently, while there has been rapid growth in the use of SiC diodes and MOSFETs in the growing electrical vehicle market and its infrastructure, there remains a 2-3x cost disparity between SiC and their Si counter parts. Nearly 75% of the cost disparity is due to the cost of the substrate and the yield losses associated with defects in the epitaxial layer. ThinSiC proposes to address both the problems by developing an all-epitaxial device layer on a reuseable SiC substrate. The Phase 1 proposal is to demonstrate a thin all epitaxial Junction Barrier Schottky diode (JBSD) using this approach. We were unfortunately not able to complete the transition to 6 inch wafers which was the prerequisite to be able to fabricate the Schottky barrier diodes, but as will be seen in the detailed description, but we were able to meet some significant intermediate milestones that showed a clear pathway to accomplishing all the objectives set out in the original proposal.

Princeton Fusion Systems (PFS) has designed, built, and tested a Load Switch printed circuit board (PCB) to demonstrate the capabilities of 2 kV silicon carbide (SiC) cascodes in development by Qorvo towards plasma heating and control applications. Initial tests have been conducted at low power (~100 W) for validation with thermal finite element analysis (FEA) modeling performed by the National Renewable Energy Laboratory (NREL). Comparisons of experimental data with the thermal modeling results, along with considerations for operating in plasma systems, will be discussed.

Discuss the SiC passive thermometry methods currently performed at INL and ORNL, decide on best path forward for establishing an ASTM Standard for processing SiC temperature monitors, and expand this ASTM benchmarking efforts to international collaborators (Netherlands, Canada, and Poland).

Powder bed fusion (PBF) is an attractive additive manufacturing option for fabrication of SiC object with complex geometries. However, the density and microstructure controls remain a challenge. This study is aimed at understanding laser–SiC interactions, with emphasis on microstructure-processing relationships, to identify potential solutions for the process improvement. SiC tubes were fabricated by PBF of pure SiC powders without sintering additives. Further, comprehensive analysis by X-ray diffraction, Raman spectroscopy, and electron microscopy indicated that binding of SiC particles was achieved by incongruent melting of SiC to a Si/C mixture containing SiC micro- and nanocrystallites. The phase evolution under laser irradiation of SiC was explained by phase diagrams. This study uncovered the PBF SiC microstructure at different length scales and the relationship between the microstructure and the processing parameters.

A series of tests have been performed to validate the resistance of the Silicon Carbide (SiC) mirror as the first mirror material of ITER VUV spectrometers to all ITER environmental conditions. Here we focused on the erosion (and deposition) of the SiC mirror sample caused by high-energy neutral particles. The flux of neutral particles reaching the first mirror was calculated using the ZEMAX software with a simplified entrance duct model. In the calculation, the particle flux reaching the first wall is necessary and the previously reported values derived from the SOLPS calculations were used. Based on this estimated particle flux, the erosion resistance tests were performed to check the erosion effect due to the high-energy neutral particles on the first mirror of ITER divertor VUV spectrometer. In the experiment, erosion was induced by exposing the SiC mirror sample to hydrogen and deuterium plasmas (and ions). The target fluence of incident ions in experiment is based on the estimation of the flux of neutral particles in ITER. The surface shape, composition, erosion depth, and surface roughness were measured to check the damage of the mirror surface after erosion test. Based on simulations and erosion resistance tests, it was concluded that the SiC mirror can be used as the first mirror of ITER divertor VUV spectrometer.

Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temperature (25 °C) and elevated temperatures (600 °C) in order to monitor subsequent lattice damage. Through the use of X-Ray topography, SEM imaging, and electrical measurements, it was shown that room temperature implanted devices can mimic the static performances of high temperature implanted MOSFETs and reduce lattice damage suffered during the fabrication process, when the dose of high energy implants are suppressed.

An additively manufactured reaction-bonded silicon carbide ceramic composite is fabricated using a bimodal powder feedstock and the binder-jetting printing technique. On fabricating, the ceramic is investigated to report its composition, mechanical, and thermal properties at room temperature and high temperatures (up to 750). The ceramic has a density of 2.76 g/cc, and shows a hardness of 21.74 GPa, and a flexure strength of 207.5 MPa at room temperature. The mechanical property of flexure strength is used to estimate its failure probability under applied stress, using a Weibull distribution. The mechanical properties and failure probabilities are compared with those of conventionally fabricated reaction-bonded silicon carbide ceramics reported in the literature. These ceramics were fabricated using methods such as slip-casting, compacting, and tape-casting. The comparison is used to elucidate the advantages and areas of improvement of the present additive manufacturing technique for reaction-bonded ceramics.

This paper reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power plants and industrial settings (metallurgic, oil extraction, molding, and aerospace). The oscillator employed a silicon carbide (SiC) power transistor and HT passive components on a screen-printed alumina circuit board capable of operation beyond 300 °C. The HT oscillator circuit was powered solely by in-situ energy scavenging thermoelectric generator (TEG) modules using passive cooling, eliminating the need for an external power supply or active cooling. In addition, a silicon-based external booster circuit was used to achieve the required TEG voltage regulation to test the TEG-powered HT oscillator circuit. The TEG-powered oscillator circuit was tested inside a non-metallic furnace from room temperature to over 300 °C for transmission of a wireless signal, which was detected outside the furnace at 11 ft (3.4 m). Such a wireless transmitting system powered only by in-situ TEGs, with no requirement for external power or active cooling, is very attractive for flexible, mobile stand-alone control and sensor units targeted for operation in HT HE conditions found in power plants and industrial settings.