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  1. In situ calibration of a light source in a sensor device

    A sensor device is described herein, wherein the sensor device includes an optical measurement system, such as an interferometer. The sensor device further includes a low-power light source that is configured to emit an optical signal having a constant wavelength, wherein accuracy of a measurement output by the sensor device is dependent upon the optical signal having the constant wavelength. At least a portion of the optical signal is directed to a vapor cell, the vapor cell including an atomic species that absorbs light having the constant wavelength. A photodetector captures light that exits the vapor cell, and generates anmore » electrical signal that is indicative of intensity of the light that exits the vapor cell. A control circuit controls operation of the light source based upon the electrical signal, such that the light source emits the optical signal with the constant wavelength.« less
  2. Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

  3. High-Speed Operation of a Compact ENZ Electroabsorption Modulator Based on Transparent Conducting Oxides.

    Abstract not provided.
  4. Optomechanical Spring Effect Readout in Resonant Micro-Optical Sagnac Gyroscopes: Design and Scaling Analysis.

    Abstract not provided.
  5. Mode selection and tuning of single-frequency short-cavity VECSELs

    Here, we report on mode selection and tuning properties of vertical-external-cavity surface-emitting lasers (VECSELs) containing coupled semiconductor and external cavities of total length less than 1 mm. Our goal is to create narrowlinewidth (<1MHz) single-frequency VECSELs that operate near 850 nm on a single longitudinal cavity resonance and tune versus temperature without mode hops. We have designed, fabricated, and measured VECSELs with external-cavity lengths ranging from 25 to 800 μm. Lastly, we compare simulated and measured coupled-cavity mode frequencies and discuss criteria for single mode selection.
  6. VCSELs for Interferometric Readout of MEMS Sensors.

    Abstract not provided.
  7. Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

    Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less
  8. VCSELs for Interferometric Readout of MEMS Sensors.

    Abstract not provided.
  9. Partially depleted GaAs photodiodes degrade with square root of fluence.

    Abstract not provided.
  10. Partially depleted GaAs photodiodes degrade with square root of fluence.

    Abstract not provided.
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"Serkland, Darwin K"

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