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  7. InP substrates form the starting point for a wide variety of semiconductor devices. The surface morphology produced during epitaxy depends critically on the starting substrate. We evaluated (1 0 0)-oriented InP wafers from three different vendors by growing thick (5 mu m) lattice-matched epilayers of InP, Gain As, and AlInAs. We assessed the surfaces with differential interference contrast microscopy and atomic force microscopy. Wafers with near singular (1 0 0) orientations produced inferior surfaces in general. Vicinal substrates with small misorientations improved the epitaxial surface for InP dramatically, reducing the density of macroscopic defects while maintaining a low RMS roughness.more » GaInAs and AlInAs epitaxy step-bunched forming undulations along the miscut direction. Sulfur-doped wafers were considered for singular (1 0 0) and for 0.2 degrees misorientation toward (1 1 0). We found that mound defects observed for InP and GaInAs layers on iron-doped singular wafers were absent for singular sulfur-doped wafers. These observations support the conclusion that dislocation termination at the surface and expansion of the step spiral lead to the macroscopic defects observed.« less
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"Overberg, Mark E."

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