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  1. Low Temperature Properties of TaxN SNS Junctions.

    Abstract not provided.
  2. Planar MultiLayer Fabrication of Josephson Junctions.

    Abstract not provided.
  3. Degradation of superconducting Nb/NbN films by atmospheric oxidation.

    Abstract not provided.
  4. Systematic materials study of NbN and TaN thin films for SNS Josephson junctions.

    Abstract not provided.
  5. Accelerated Aging of Li(Si)/FeS2 Thermal Batteries.

    Abstract not provided.
  6. Failure Analysis and Process Improvement for Superconducting Electronics.

    Abstract not provided.
  7. Tunable Nitride Josephson Junctions.

    We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.
  8. Wafer level fabrication of planarized josephson junctions with TaNx Barriers.

    Abstract not provided.
  9. Wafer Level Fabrication of Planarized Josephson Junctions with TaNx Barriers.

    Abstract not provided.
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"Missert, Nancy A."

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