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  1. Abstract not provided.
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  3. We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.
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  8. We have developed and characterized novel in-situ corrosion sensors to monitor and quantify the corrosive potential and history of localized environments. Embedded corrosion sensors can provide information to aid health assessments of internal electrical components including connectors, microelectronics, wires, and other susceptible parts. When combined with other data (e.g. temperature and humidity), theory, and computational simulation, the reliability of monitored systems can be predicted with higher fidelity.
  9. Abstract not provided.

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"Missert, Nancy A."

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