skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information
  1. Abstract not provided.
  2. Abstract not provided.
  3. Abstract not provided.
  4. Abstract not provided.
  5. Our study describes complications introduced by angular direct ionization events on space error rate predictions. In particular, prevalence of multiple-cell upsets and a breakdown in the application of effective linear energy transfer in modern-scale devices can skew error rates approximated from currently available estimation models. Moreover, this paper highlights the importance of angular testing and proposes a methodology to extend existing error estimation tools to properly consider angular strikes in modern-scale devices. Finally, these techniques are illustrated with test data provided from a modern 28 nm SRAM-based device.
  6. Abstract not provided.
  7. Abstract not provided.
  8. Abstract not provided.
  9. Low- and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute to the total on-orbit single-event upset (SEU) rate. Every effort was made to predict LEP error rates that are conservatively high; even secondary protons generated in the spacecraft shielding have been included in the analysis. Across all the environments and circuits investigated, and when operating within 10% of the nominal operating voltage, LEPs were found to increase the total SEU rate to up to 4.3 timesmore » as high as it would have been in the absence of LEPs. Therefore, the best approach to account for LEP effects may be to calculate the total error rate from high-energy protons and heavy ions, and then multiply it by a safety margin of 5. If that error rate can be tolerated then our findings suggest that it is justified to waive LEP tests in certain situations. Trends were observed in the LEP angular responses of the circuits tested. As a result, grazing angles were the worst case for the SOI circuits, whereas the worst-case angle was at or near normal incidence for the bulk circuits.« less

Search for:
All Records
Creator / Author
"Lee, David S."

Refine by:
Resource Type
Publication Date
Creator / Author
Research Organization