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  1. Contribution of Deep Level Defects to Decreasing Radiative Efficiency of InGaN/GaN Quantum Wells with Increasing Emission Wavelength.

    Abstract not provided.
  2. Controlling Indium Incorporation in InGaN Barriers with Dilute Hydrogen Flows.

    Abstract not provided.
  3. Top-Down Fabrication and Characterization of Axial and Radial III-Nitride Nanowire LEDs.

    Abstract not provided.
  4. Connection between GaN and InGaN Growth Mechanisms and Surface Morphology.

    Abstract not provided.
  5. Genetic Algorithm for Innovative Designs in High Efficiency III-V Nitride Light-Emittin Diodes.

    Abstract not provided.
  6. III-nitride core-shell nanowire arrayed solar cells.

  7. On the Symmetry of Efficiency-Versus-Carrier-Concentration Curves in GaInN/GaN Light-Emitting Diodes and Relation to Droop-Causing Mechanisms.

    Abstract not provided.
  8. Enhanced Light-Extraction from a GaN Waveguide using Micro-Pillar TiO2-SiO2 Graded-Refractive-Index Layers.

    Abstract not provided.
  9. Identifying Threading Dislocations in GaN Films and Substrates by Electron Channeling.

    Abstract not provided.
  10. Quantum-confined stark effect and polarization field in single quantum well InGaN/GaN LEDs.

    Based on the wurtzite crystal structure, large (MV/cm) polarization-induced electric fields are known to exist in InGaN single quantum wells (SQWs) grown perpendicular to the GaN c-axis, and these fields may impact optical device performance due to the quantum-confined Stark effect (QCSE). In general, the QCSE has experimentally been found to be smaller than the theoretical value expected for a coherently strained InGaN QW, and subsequently the InGaN/GaN QW polarization field is often under-estimated as well. In this study, we measure the QCSE in modulation-doped, InGaN/GaN SQW LEDs. The well-behaved capacitance-voltage (majority-carrier) characteristics of these devices allow us to unambiguouslymore » determine the applied field with bias. With this analysis, we de-couple the QCSE from the QW polarization field and show that although the applied field approaches the opposing QW polarization field theoretical value (i.e., flatband), the QCSE remains too small. We propose a localized-hole picture of the InGaN QW which explains our optical and electrical measurements.« less
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"Koleske, Daniel David"

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