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  1. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

    Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase inmore » strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.« less
  2. Semiconductor Detectors for Sub-ns Detection of 20-70 keV X-Rays.

    Abstract not provided.
  3. An InGaSb p-channel FinFET.

    Abstract not provided.
  4. Two-color infrared detector

    A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuousmore » at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.« less
  5. Analysis of MWIR nBn Devices Built with III-V Superlattices for Strategic Applications on STAMPEDE.

    Abstract not provided.
  6. Nanoantenna-Enhanced Infrared Detectors for Improved Performance and Spectral Tunability.

    Abstract not provided.
  7. Next-Generation Infrared Focal Plane Arrays for High-Efficiency Low-Noise Applications.

    Abstract not provided.
  8. Next-Generation Infrared Focal Plane Arrays for High-Responsivity Low-Noise Applications.

    Abstract not provided.
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"Kim, Jin K."

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