28 Search Results

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Nanocoatings on solids can be achieved by various processes, including sol-gel and atomic layer deposition. However, challenges remain for achieving uniform nanocoatings on nanoscale substrates at a large scale. Here, we report a versatile and fundamentally different technique, termed condensed layer deposition, for depositing conformal metal oxide nanocoatings on nanoparticles and nanofibers. This approach involves water in liquid hydrocarbons condensing as a nanoscale water film on the substrate surface, enabled by interfacial tension between polar water and nonpolar liquid hydrocarbons. Chemical precursors are then added, which react with the condensed water film to form a metal oxide nanocoating. We demonstrate this for titania, alumina, and niobia on substrates including carbon nanotubes, iron oxide particles and carbon black. Condensed layer deposition can achieve oxide nanocoatings on a variety of substrates with tunable thickness, in one pass, at room temperature.

While the discovery of two-dimensional (2D) magnets opens the door for fundamental physics and next-generation spintronics, it is technically challenging to achieve the room-temperature ferromagnetic (FM) order in a way compatible with potential device applications. Here in this paper, we report the growth and properties of single- and few-layer CrTe₂, a van der Waals (vdW) material, on bilayer graphene by molecular beam epitaxy (MBE). Intrinsic ferromagnetism with a Curie temperature (TC) up to 300 K, an atomic magnetic moment of ~0.21 μ_B/Cr and perpendicular magnetic anisotropy (PMA) constant (K_u) of 4.89 × 10⁵ erg/cm³ at room temperature in these few-monolayer films have been unambiguously evidenced by superconducting quantum interference device and X-ray magnetic circular dichroism. This intrinsic ferromagnetism has also been identified by the splitting of majority and minority band dispersions with ~0.2 eV at Г point using angle-resolved photoemission spectroscopy. The FM order is preserved with the film thickness down to a monolayer (T_C ~ 200 K), benefiting from the strong PMA and weak interlayer coupling. The successful MBE growth of 2D FM CrTe₂ films with room-temperature ferromagnetism opens a new avenue for developing large-scale 2D magnet-based spintronics devices.

Abstract The oxidation behavior of matrix‐grade graphite in air‐ or steam‐ingress accident scenarios is of great interest for high‐temperature gas reactors (HTGRs). In this study, the microstructures of two variants of matrix‐grade graphite based on the German A3‐3 and A3‐27 formulations were characterized with scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy, and correlated to oxidation behavior observed through thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). Through TEM imaging and selected area electron diffraction (SAED), a higher volume fraction of partially graphitized carbon was identified in the A3‐3 type graphite than in the A3‐27 type. This structure is believed to have contributed to the accelerated oxidation exhibited by A3‐3 in the chemical reaction‐controlled oxidation regime.

As Li ion battery (LIB) technology develops, its nanoscale design is attracting more and more interest. Atomic layer deposition (ALD) has emerged as a promising technique to provide conformal and ultrathin coating for LIB materials. In this work, an iron oxide (FeO_x) ALD was performed on LiMn_1.5Ni_0.5O-5₄ (LMNO) cathode particles, followed by an annealing process. Here, Fe was doped into LMNO during the ALD process; and it was found that lattice oxygen loss and structural change of LMNO occurred at a reaction temperature of 450 °C under vacuum. Meanwhile, Fe diffused from the surface to the bulk of LMNO. After post-annealing, FeO_x-coated LMNO recovered its structure and lattice oxygen under proper annealing conditions, and exhibited significant enhancement of specific capacity, rate capability, and cyclic stability.

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From research on single-layer graphene, we find that atomic deuteration indeed does lead to reversible chemisorption. Yet, we find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. Nonetheless, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film.

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Abstract Elemental intermixing at the CdS/CuIn _1−x Ga _x Se ₂ (CIGS) heterojunction in thin‐film photovoltaic devices plays a crucial role in carrier separation and thus device efficiency. Using scanning transmission electron microcopy in combination with energy dispersive X‐ray mapping, we find that by controlling the oxygen in the sputtering gas during physical vapor deposition (PVD) of the CdS, we can tailor the degree of elemental intermixing. More oxygen suppresses Cu migration from the CIGS into the CdS, while facilitating Zn doping in the CdS from the ZnO transparent contact. Very high oxygen levels induce nanocrystallinity in the CdS, while moderate or no oxygen content can promote complete CdS epitaxy on the CIGS grains. Regions of cubic Cu ₂ S phase were observed in the Cu‐rich CdCuS when no oxygen is included in the CdS deposition process. In the process‐of‐record sample (moderate O ₂ ) that exhibits the highest solar conversion efficiency, we observe a ~26‐nm‐thick Cu‐deficient CIGS surface counter‐doped with the highest Cd concentration among all of the samples. Cd movement into the CIGS was found to be less than 10 nm deep for samples with either high or zero O ₂ . The results are consistent with the expectation that Cd doping of the CIGS surface and lack of Zn diffusion into the buffer both enhance device performance.