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  1. Resistive field structures for semiconductor devices and uses therof

    The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additionalmore » methods and architectures are described herein.« less
  2. A TaN Resistor Reliability Evaluation.

    Abstract not provided.
  3. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

    In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less
  4. Ohmic Contacts to Al0.85Ga0.15N/Al0.7Ga0.3N Heterostructure.

    Abstract not provided.
  5. Electric Field Control of AlGaN/GaN HEMTs Operating in the kV Regime.

    Abstract not provided.
  6. Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited).

    Abstract not provided.
  7. Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited).

    Abstract not provided.
  8. Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

    AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less
  9. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.

    Abstract not provided.
  10. Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact.

    Abstract not provided.

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"Baca, Albert G."

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