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  1. Resistive field structures for semiconductor devices and uses therof

    The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additionalmore » methods and architectures are described herein.« less
  2. Surface Analysis of AlGaN Channel High Electron Mobility Transistors.

    Abstract not provided.
  3. A TaN Resistor Reliability Evaluation.

    Abstract not provided.
  4. Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Electronic Devices.

    Abstract not provided.
  5. Growth and Electrical Properties of Al-Rich AlGaN/AlGaN Heterostructures for High-Electron-Mobility Transistors.

    Abstract not provided.
  6. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

    In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less
  7. Ultra-Wide-Bandgap Semiconductors for Efficient and Compact Power Conversion in Harsh Environments.

    Abstract not provided.
  8. Ohmic Contacts to Al0.85Ga0.15N/Al0.7Ga0.3N Heterostructure.

    Abstract not provided.
  9. Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited).

    Abstract not provided.
  10. Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices.

    Abstract not provided.

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"Baca, Albert G."

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