Etching Of Semiconductor Wafer Edges
Abstract
A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.
- Inventors:
-
- Billerica, MA
- Dunbarton, NH
- Publication Date:
- OSTI Identifier:
- 879579
- Patent Number(s):
- US 6660643
- Application Number:
- 09/261616
- Assignee:
- RWE Schott Solar, Inc. (Billerica, MA)
- DOE Contract Number:
- NREL-ZAF-6-14271-13
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kardauskas, Michael J, and Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States: N. p., 2003.
Web.
Kardauskas, Michael J, & Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States.
Kardauskas, Michael J, and Piwczyk, Bernhard P. 2003.
"Etching Of Semiconductor Wafer Edges". United States. https://www.osti.gov/servlets/purl/879579.
@article{osti_879579,
title = {Etching Of Semiconductor Wafer Edges},
author = {Kardauskas, Michael J and Piwczyk, Bernhard P},
abstractNote = {A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.},
doi = {},
url = {https://www.osti.gov/biblio/879579},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 09 00:00:00 EST 2003},
month = {Tue Dec 09 00:00:00 EST 2003}
}
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