Scanning tunneling microscope nanoetching method
Patent
·
OSTI ID:867251
A method is described for forming uniform nanometer sized depressions on the surface of a conducting substrate. A tunneling tip is used to apply tunneling current density sufficient to vaporize a localized area of the substrate surface. The resulting depressions or craters in the substrate surface can be formed in information encoding patterns readable with a scanning tunneling microscope.
- Research Organization:
- Purdue Univ., West Lafayette, IN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-84ER45162
- Assignee:
- Purdue Research Foundation (West Lafayette, IN)
- Patent Number(s):
- 4,896,044
- Application Number:
- 07/312,768
- OSTI ID:
- 867251
- Resource Relation:
- Patent File Date: 1989 Feb 17
- Country of Publication:
- United States
- Language:
- English
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