High temperature bias line stabilized current sources
Patent
·
OSTI ID:865160
- (Melbourne, FL)
A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Harris Corporation (Melbourne, FL)
- Patent Number(s):
- US 4471236
- OSTI ID:
- 865160
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
temperature
bias
line
stabilized
current
sources
compensation
device
base
emitter
follower
configured
bipolar
transistors
becoming
operable
elevated
temperatures
including
transistor
geometry
half
collector
connected
elevated temperatures
elevated temperature
current source
bipolar transistors
bipolar transistor
temperatures including
temperature bias
current sources
/327/323/
bias
line
stabilized
current
sources
compensation
device
base
emitter
follower
configured
bipolar
transistors
becoming
operable
elevated
temperatures
including
transistor
geometry
half
collector
connected
elevated temperatures
elevated temperature
current source
bipolar transistors
bipolar transistor
temperatures including
temperature bias
current sources
/327/323/