Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling

Technical Report · Wed Feb 14 00:00:00 EST 2001

DOI:https://doi.org/10.2172/777628· OSTI ID:777628

Butler, W H

ORNL's advanced characterization capabilities were used to determine the physical and chemical structure of magnetic multilayer films intended for application in non-volatile magnetic random access memory devices and as magnetic sensors. ORNL modeling capabilities were used to incorporate this information into a first-principles based tool that can be used to model the magnetic and transport properties of these films. This modeling capability should be useful for understanding and optimizing novel magnetoelectronic devices.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 777628
• Report Number(s): C/ORNL97-0477; TRN: AH200118%%16
• Resource Relation: Other Information: PBD: 14 Feb 2001
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
MAGNETIC MATERIALS
MAGNETORESISTANCE
MEMORY DEVICES
MONITORS
PHYSICAL PROPERTIES
CHEMICAL PROPERTIES
MATHEMATICAL MODELS