DIELECTRIC PROPERTIES OF BA(0.6)SR(0.4)TiO(3) THIN FILMS WITH VARIOUS STRAIN STATES
Conference
·
OSTI ID:777450
We could systematically control the strain states of a Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} film by depositing a very thin Ba{sub 1{minus}x}Sr{sub x}TiO{sub 3} interlayer between the main layer of the Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} and a MgO(001) substrate. Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} films showed very strong dependence of dielectric properties on the strain states. The strain induced by the MgO substrate was relaxed faster than that induced by an interlayer.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 777450
- Report Number(s):
- LA-UR-01-1929; TRN: AH200123%%124
- Resource Relation:
- Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 Apr 2001
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxial growth of dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin film on MgO for room temperature microwave phase shifters
Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers
Structural and dielectric properties of Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin films
Journal Article
·
Mon Jan 29 00:00:00 EST 2001
· Applied Physics Letters
·
OSTI ID:777450
+7 more
Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers
Journal Article
·
Mon Feb 06 00:00:00 EST 2006
· Applied Physics Letters
·
OSTI ID:777450
+2 more
Structural and dielectric properties of Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin films
Conference
·
Thu Jan 01 00:00:00 EST 2004
·
OSTI ID:777450
+1 more