skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structural and Electronic Studies of a-SiGe:H Alloys, Final Subcontract Report, 1 January 1991 - 28 February 1993

Technical Report ·
DOI:https://doi.org/10.2172/6633607· OSTI ID:6633607

This report describes work to produce alloys of a-Si[sub 1-x]Ge[sub x]:H of improved photoelectronic quality by plasma-enhanced chemical vapor deposition (PECVD). The goal was to discover optimum preparation conditions for the end-component, a-Ge:H, to establish whether modification of the usual practice of starting from a-Si:H preparation conditions was advisable. Such modification, found to be necessary, gave films of a-Ge:H with efficiency-mobility-lifetime products ([eta][mu][tau]) 10[sup 2] to 10[sup 3] higher than were earlier available, in homogeneous environmentally stable material. Both a-Ge:H and a-Si[sub 1-x]Ge[sub x]:H of large x were studied in detail. Alloy material was shown to have [eta][mu][tau] 10[sup 2] larger than found earlier. However, just as the [eta][mu][tau] of a-Si:H decreases when Ge is added, so also the [eta][mu][tau] of these alloys with Si addition. By contrast, the ambipolar diffusion lengths, L[sub o] which are governed by the hole mobility, vary by only a factor of two over the whole alloy series. Using the experimental finding of a small valence band offset between a-Si:H and a-Ge:H compositional fluctuations on a 10-mm scale are suggested to explain the behavior of [eta][mu][tau] and L[sub o] The implications for eventual improvement of the alloys are profound, but require direct experimental tests of the postulated compositional fluctuations.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
6633607
Report Number(s):
NREL/TP-411-5457; ON: DE93010021
Country of Publication:
United States
Language:
English