Amorphous Ge bipolar blocking contacts on Ge detectors
Abstract
Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (United States)
- OSTI Identifier:
- 6015921
- Report Number(s):
- LBL-30606; CONF-911106-45
ON: DE92004094
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Conference
- Resource Relation:
- Conference: IEEE nuclear science symposium, Santa Fe, NM (United States), 5-9 Nov 1991
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GE SEMICONDUCTOR DETECTORS; ELECTRIC CONTACTS; AMORPHOUS STATE; COBALT 60; ELECTRICAL TESTING; SPUTTERING; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTRICAL EQUIPMENT; EQUIPMENT; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MATERIALS TESTING; MEASURING INSTRUMENTS; MINUTES LIVING RADIOISOTOPES; NONDESTRUCTIVE TESTING; NUCLEI; ODD-ODD NUCLEI; RADIATION DETECTORS; RADIOISOTOPES; SEMICONDUCTOR DETECTORS; TESTING; YEARS LIVING RADIOISOT; 440103* - Radiation Instrumentation- Nuclear Spectroscopic Instrumentation
Citation Formats
Luke, P N, Cork, C P, Madden, N W, Rossington, C S, and Wesela, M F. Amorphous Ge bipolar blocking contacts on Ge detectors. United States: N. p., 1991.
Web.
Luke, P N, Cork, C P, Madden, N W, Rossington, C S, & Wesela, M F. Amorphous Ge bipolar blocking contacts on Ge detectors. United States.
Luke, P N, Cork, C P, Madden, N W, Rossington, C S, and Wesela, M F. 1991.
"Amorphous Ge bipolar blocking contacts on Ge detectors". United States. https://www.osti.gov/servlets/purl/6015921.
@article{osti_6015921,
title = {Amorphous Ge bipolar blocking contacts on Ge detectors},
author = {Luke, P N and Cork, C P and Madden, N W and Rossington, C S and Wesela, M F},
abstractNote = {Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.},
doi = {},
url = {https://www.osti.gov/biblio/6015921},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 1991},
month = {Tue Oct 01 00:00:00 EDT 1991}
}