Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited).
Conference
·
OSTI ID:1398370
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1398370
- Report Number(s):
- SAND2016-9835C; 647929
- Resource Relation:
- Conference: Proposed for presentation at the International Workshop on Nitride Semiconductors (IWN 2016) held October 2-7, 2016 in Orlando, FL.
- Country of Publication:
- United States
- Language:
- English
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