Ultra-Wide-Bandgap AlGaN Power Electronic Devices.

Kaplar, Robert; Allerman, Andrew A.; Armstrong, Andrew; Crawford, Mary H.; Dickerson, Jeramy Ray; Fischer, Arthur J.; Leonard, Francois Leonard; Talin, Albert Alec; King, Michael Patrick; Baca, Albert G.; Douglas, Erica Ann

doi:10.1149/2.0111702jss

Title: Ultra-Wide-Bandgap AlGaN Power Electronic Devices.

Conference · Thu Sep 01 00:00:00 EDT 2016

DOI:https://doi.org/10.1149/2.0111702jss· OSTI ID:1393785

Kaplar, Robert; Allerman, Andrew A.; Armstrong, Andrew; Crawford, Mary H.; Dickerson, Jeramy Ray; Fischer, Arthur J.; Leonard, Francois Leonard; Talin, Albert Alec; King, Michael Patrick; Baca, Albert G.; Douglas, Erica Ann

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1393785

Report Number(s):: SAND2016-9086C; 647385

Resource Relation:: Journal Volume: 6; Journal Issue: 2; Conference: Proposed for presentation at the European Materials Research Society Fall Meeting held September 18-22, 2016 in Warsaw, Poland.

Country of Publication:: United States

Language:: English

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Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors Xie, Chao; Lu, Xing-Tong; Tong, Xiao-Wei Advanced Functional Materials, Vol. 29, Issue 9 https://doi.org/10.1002/adfm.201806006	journal	January 2019
High‐Temperature Operation of Al _x Ga _{1− x} N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides Mollah, Shahab; Hussain, Kamal; Floyd, Richard physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900802	journal	February 2020
Progress in efficient doping of high aluminum-containing group III-nitrides Liang, Y. -H.; Towe, E. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5009349	journal	March 2018
Perspective: Ga ₂ O ₃ for ultra-high power rectifiers and MOSFETS Pearton, S. J.; Ren, Fan; Tadjer, Marko Journal of Applied Physics, Vol. 124, Issue 22 https://doi.org/10.1063/1.5062841	journal	December 2018
Amorphous gallium oxide sulfide: A highly mismatched alloy Jaquez, Maribel; Specht, Petra; Yu, Kin Man Journal of Applied Physics, Vol. 126, Issue 10 https://doi.org/10.1063/1.5111985	journal	September 2019
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5115013	journal	October 2019
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO ₂ dielectric Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, Mvs Semiconductor Science and Technology, Vol. 34, Issue 12 https://doi.org/10.1088/1361-6641/ab4781	journal	October 2019
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy Pandey, A.; Liu, X.; Deng, Z. Physical Review Materials, Vol. 3, Issue 5 https://doi.org/10.1103/physrevmaterials.3.053401	journal	May 2019
Temperature-Dependent Electrical Characteristics of β-Ga ₂ O ₃ Diodes with W Schottky Contacts up to 500°C Fares, Chaker; Ren, Fan; Pearton, S. J. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0011907jss	journal	December 2018
Optimization of Edge Termination Techniques for β-Ga ₂ O ₃ Schottky Rectifiers Sharma, Ribhu; Patrick, Erin E.; Law, M. E. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 12 https://doi.org/10.1149/2.0141912jss	journal	January 2019
Thermal Simulations of High Current β-Ga ₂ O ₃ Schottky Rectifiers Sharma, Ribhu; Patrick, Erin; Law, Mark E. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0361907jss	journal	January 2019
Comparison of Dual-Stack Dielectric Field Plates on β-Ga ₂ O ₃ Schottky Rectifiers Carey, Patrick H.; Yang, Jiancheng; Ren, Fan ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0391907jss	journal	January 2019
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates Abid, Idriss; Kabouche, Riad; Bougerol, Catherine Micromachines, Vol. 10, Issue 10 https://doi.org/10.3390/mi10100690	journal	October 2019

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