Resistive field structures for semiconductor devices and uses therof

Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert; Baca, Albert G.

Title: Resistive field structures for semiconductor devices and uses therof

Patent · Tue Sep 12 00:00:00 EDT 2017

OSTI ID:1389791

Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert; Baca, Albert G.

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: National Technology & Engineering Solutions of Sandia, LLC

Patent Number(s):: 9,761,675

Application Number:: 14/989,633

OSTI ID:: 1389791

Resource Relation:: Patent File Date: 2016 Jan 06

Country of Publication:: United States

Language:: English

References (13)

Semiconductor Device Kusunoki, Shigeru https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100118455 US Patent Application 12/436453; 20100118455	patent-application	May 2010
Semiconductor device Kobayashi, Hitoshi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150263107 US Patent Application 14/474051; 20150263107	patent-application	September 2015
Breakdown characteristics in AlGaN/GaN HEMTs with multi-field-plate structure Asano, T.; Yamada, N.; Saito, T. 2012 IEEE International Meeting for Future of Electron Devices, Kansai https://doi.org/10.1109/IMFEDK.2012.6218601	conference	May 2012
Semiconductors for high‐voltage, vertical channel field‐effect transistors Baliga, B. J. Journal of Applied Physics, Vol. 53, Issue 3, p. 1759-1764 https://doi.org/10.1063/1.331646	journal	March 1982
Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Yi Physics Procedia, Vol. 25, p. 86-91 https://doi.org/10.1016/j.phpro.2012.03.054	journal	January 2012
Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Cho, Kyu-Heon; Kim, Young-Shil; Lim, Jiyong Solid-State Electronics, Vol. 54, Issue 4, p. 405-409 https://doi.org/10.1016/j.sse.2009.12.034	journal	April 2010
A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si Das, Jo; Everts, Jordi; Van Den Keybus, Jeroen IEEE Electron Device Letters, Vol. 32, Issue 10, p. 1370-1372 https://doi.org/10.1109/LED.2011.2162393	journal	October 2011
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates Dora, Y.; Chakraborty, A.; Mccarthy, L. IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715 https://doi.org/10.1109/LED.2006.881020	journal	September 2006
Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator Karmalkar, Shreepad; Mishra, Umesh K. Solid-State Electronics, Vol. 45, Issue 9, p. 1645-1652 https://doi.org/10.1016/S0038-1101(01)00158-7	journal	September 2001
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate Karmalkar, S.; Mishra, U. K. IEEE Transactions on Electron Devices, Vol. 48, Issue 8, p. 1515-1521 https://doi.org/10.1109/16.936500	journal	January 2001
Optical and electrical properties of Mg-doped p-type Al_xGa_1−xN Li, J.; Oder, T. N.; Nakarmi, M. L. Applied Physics Letters, Vol. 80, Issue 7, p. 1210-1212 https://doi.org/10.1063/1.1450038	journal	February 2002
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping Nakarmi, M. L.; Kim, K. H.; Li, J. Applied Physics Letters, Vol. 82, Issue 18, p. 3041-3043 https://doi.org/10.1063/1.1559444	journal	May 2003
Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage Saito, W.; Kuraguchi, M.; Takada, Y. IEEE Transactions on Electron Devices, Vol. 52, Issue 2, p. 159-164 https://doi.org/10.1109/TED.2004.842710	journal	February 2005

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