Efficient modeling of Bragg coherent x-ray nanobeam diffraction

Hruszkewycz, S. O.; Holt, M. V.; Allain, M.; Chamard, V.; Polvino, S. M.; Murray, C. E.; Fuoss, P. H.

doi:10.1364/OL.40.003241

Title: Efficient modeling of Bragg coherent x-ray nanobeam diffraction

Journal Article · Thu Jul 02 00:00:00 EDT 2015 · Optics Letters

DOI:https://doi.org/10.1364/OL.40.003241· OSTI ID:1356646

Hruszkewycz, S. O. ^[1]; Holt, M. V. ^[2]; Allain, M. ^[3]; Chamard, V. ^[3]; Polvino, S. M. ^[4]; Murray, C. E. ^[5]; Fuoss, P. H. ^[1]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Aix-Marseille Univ., Marseille (France). CNRS. Fresnel Inst.
Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Mathematics
Thomas J. Watson Research Center, Yorktown Heights, NY (United States). IBM Corporation

X-ray Bragg diffraction experiments that utilize tightly focused coherent beams produce complicated Bragg diffraction patterns that depend on scattering geometry, characteristics of the sample, and properties of the x-ray focusing optic. In this paper, we use a Fourier-transform-based method of modeling the 2D intensity distribution of a Bragg peak and apply it to the case of thin films illuminated with a Fresnel zone plate in three different Bragg scattering geometries. Finally, the calculations agree well with experimental coherent diffraction patterns, demonstrating that nanodiffraction patterns can be modeled at nonsymmetric Bragg conditions with this approach—a capability critical for advancing nanofocused x-ray diffraction microscopy.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States); Aix-Marseille Univ., Marseille (France)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Agency for Research (ANR) (France)

Contributing Organization:: Columbia Univ., New York, NY (United States); Thomas J. Watson Research Center, Yorktown Heights, NY (United States)

Grant/Contract Number:: AC02-06CH11357; ANR-11-BS10-0005

OSTI ID:: 1356646

Alternate ID(s):: OSTI ID: 1222258

Journal Information:: Optics Letters, Vol. 40, Issue 14; ISSN 0146-9592

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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References (8)

Nanoscale Hard X-Ray Microscopy Methods for Materials Studies Holt, Martin; Harder, Ross; Winarski, Robert Annual Review of Materials Research, Vol. 43, Issue 1 https://doi.org/10.1146/annurev-matsci-071312-121654	journal	July 2013
Modeling of kinematic diffraction from a thin silicon film illuminated by a coherent, focused X-ray nanobeam Ying, Andrew; Osting, Braxton; Noyan, I. C. Journal of Applied Crystallography, Vol. 43, Issue 3 https://doi.org/10.1107/S0021889810008459	journal	April 2010
Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography Hruszkewycz, S. O.; Holt, M. V.; Murray, C. E. Nano Letters, Vol. 12, Issue 10 https://doi.org/10.1021/nl303201w	journal	September 2012
Coherent X-ray diffraction imaging of strain at the nanoscale Robinson, Ian; Harder, Ross Nature Materials, Vol. 8, Issue 4 https://doi.org/10.1038/nmat2400	journal	April 2009
Framework for three-dimensional coherent diffraction imaging by focused beam x-ray Bragg ptychography Hruszkewycz, Stephan O.; Holt, Martin V.; Tripathi, Ash Optics Letters, Vol. 36, Issue 12 https://doi.org/10.1364/OL.36.002227	journal	January 2011
Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions Murray, Conal E.; Ren, Z.; Ying, A. Applied Physics Letters, Vol. 94, Issue 6 https://doi.org/10.1063/1.3079656	journal	February 2009
Coherent Bragg nanodiffraction at the hard X-ray Nanoprobe beamline Hruszkewycz, S. O.; Holt, M. V.; Maser, J. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 372, Issue 2010 https://doi.org/10.1098/rsta.2013.0118	journal	March 2014
Nanomembrane-based materials for Group IV semiconductor quantum electronics Paskiewicz, D. M.; Savage, D. E.; Holt, M. V. Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep04218	journal	February 2014

Cited By (2)

High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography Hruszkewycz, S. O.; Allain, M.; Holt, M. V. Nature Materials, Vol. 16, Issue 2 https://doi.org/10.1038/nmat4798	journal	November 2016
Imaging nanoscale lattice variations by machine learning of x-ray diffraction microscopy data Laanait, Nouamane; Zhang, Zhan; Schlepütz, Christian M. Nanotechnology, Vol. 27, Issue 37 https://doi.org/10.1088/0957-4484/27/37/374002	journal	August 2016

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36 MATERIALS SCIENCE
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