Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition
Abstract
Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33 Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Tsinghua Univ., Beijing (China)
- Univ. of Texas at San Antonio, San Antonio, TX (United States)
- Texas A & M Univ., College Station, TX (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program
- OSTI Identifier:
- 1329907
- Alternate Identifier(s):
- OSTI ID: 1307786
- Report Number(s):
- LA-UR-16-24476
Journal ID: ISSN 0003-6951; APPLAB
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 8; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; inorganic and physical chemistry; material science; thin film structure; molybdenum; epitaxy; electrical resistivity; materials properties
Citation Formats
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, and Jia, Quanxi. Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition. United States: N. p., 2016.
Web. doi:10.1063/1.4961880.
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, & Jia, Quanxi. Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition. United States. https://doi.org/10.1063/1.4961880
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, and Jia, Quanxi. 2016.
"Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition". United States. https://doi.org/10.1063/1.4961880. https://www.osti.gov/servlets/purl/1329907.
@article{osti_1329907,
title = {Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition},
author = {Enriquez, Erik M. and Zhang, Yingying and Chen, Aiping and Bi, Zhenxing and Wang, Yongqiang and Fu, Engang and Harrell, Zachary John and Lu, Xujie and Dowden, Paul Charles and Wang, Haiyan and Chen, Chonglin and Jia, Quanxi},
abstractNote = {Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33 Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.},
doi = {10.1063/1.4961880},
url = {https://www.osti.gov/biblio/1329907},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 109,
place = {United States},
year = {Fri Aug 26 00:00:00 EDT 2016},
month = {Fri Aug 26 00:00:00 EDT 2016}
}
Web of Science
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