Bismuth-induced Raman modes in GaP1–xBix

Christian, Theresa M.; Fluegel, Brian; Beaton, Daniel A.; Alberi, Kirstin; Mascarenhas, Angelo

doi:10.7567/JJAP.55.108002

Title: Bismuth-induced Raman modes in GaP_1–_xBi_x

Journal Article · Fri Sep 02 00:00:00 EDT 2016 · Japanese Journal of Applied Physics

DOI:https://doi.org/10.7567/JJAP.55.108002· OSTI ID:1329366

Christian, Theresa M. ^[1]; Fluegel, Brian ^[2]; Beaton, Daniel A. ^[2]; Alberi, Kirstin ^[2]; Mascarenhas, Angelo ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP_{1- x}Bi_x epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm^-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1329366

Report Number(s):: NREL/JA-5K00-66536

Journal Information:: Japanese Journal of Applied Physics, Vol. 55, Issue 10; ISSN 0021-4922

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Cited By (3)

Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys Bushell, Zoe L.; Broderick, Christopher A.; Nattermann, Lukas Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-43142-5	journal	May 2019
MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure Steidl, Matthias; Schwarzburg, Klaus; Galiana, Beatriz Nanotechnology, Vol. 30, Issue 10 https://doi.org/10.1088/1361-6528/aaf607	journal	January 2019
Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH Steidl, Matthias; Wu, Mingjian; Peh, Katharina Nanoscale Research Letters, Vol. 13, Issue 1 https://doi.org/10.1186/s11671-018-2833-6	journal	December 2018

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71 CLASSICAL AND QUANTUM MECHANICS
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Title: Bismuth-induced Raman modes in GaP_1–_xBi_x