Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures

Pan, Minghu; Liang, Liangbo; Lin, Wenzhi; Kim, Soo Min; Li, Qing; Kong, Jing; Dresselhaus, Mildred S.; Meunier, Vincent

doi:10.1088/2053-1583/3/4/045002

Title: Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures

Journal Article · Wed Sep 28 00:00:00 EDT 2016 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/3/4/045002· OSTI ID:1328322

Pan, Minghu ^[1]; Liang, Liangbo ^[2]; Lin, Wenzhi ^[2]; Kim, Soo Min ^[3]; Li, Qing ^[4]; Kong, Jing ^[3]; Dresselhaus, Mildred S. ^[5]; Meunier, Vincent ^[6]

Huazhong Univ. of Science and Technology, Wuhan (China). School of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
Soochow Univ., Jiangsu (China). Inst. of Functional Nano and Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Science and Technology
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of of Physics
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy

Van der Waals (vdW) heterostructures consist of isolated atomic planar structures, assembled layer- by-layer into desired structures in a well-defined sequence. Graphene deposited on hexagonal boron nitride (h-BN) has been first considered as a testbed system for vdW heterostructures, and many others have been demonstrated both theoretically and experimentally, revealing many attractive properties and phenomena. However, much less emphasis has been placed on how graphene actively affects h-BN properties. Here, we perform local probe measurements on single-layer h-BN grown over graphene and highlight the manifestation of a proximity effect that significantly affects the electronic properties of h-BN due to its coupling with the underlying graphene. We find electronic states originating from the graphene layer and the Cu substrate to be injected into the wide electronic gap of the h-BN top layer. Such proximity effect is further confirmed in a study of the variation of h-BN in-gap states with interlayer couplings, elucidated using a combination of topographical/ spectroscopic measurements and first-principles density functional theory calculations. In conclusion, the findings of this work indicate the potential of mutually engineering electronic properties of the components of vdW heterostructures.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC); National Natural Science Foundation of China (NSFC); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; 11574095; EFRI-1542707; DMR0845358; N00014-09-1-1063

OSTI ID:: 1328322

Alternate ID(s):: OSTI ID: 1327077

Journal Information:: 2D Materials, Vol. 3, Issue 4; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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