Multilevel resistive information storage and retrieval

Lohn, Andrew; Mickel, Patrick R.

Title: Multilevel resistive information storage and retrieval

Patent · Tue Aug 09 00:00:00 EDT 2016

OSTI ID:1288560

Lohn, Andrew; Mickel, Patrick R.

The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 9,412,446

Application Number:: 14/462,472

OSTI ID:: 1288560

Resource Relation:: Patent File Date: 2014 Aug 18

Country of Publication:: United States

Language:: English

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