An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe
Journal Article
·
· Scripta Materialia
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ.of Sheffield (United Kingdom)
- Univ. of Huddersfield (United Kingdom)
We used transmission electron microscopy with in situ ion irradiation to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. Moreover, for the differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1286947
- Journal Information:
- Scripta Materialia, Vol. 113, Issue C; ISSN 1359-6462
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 12 works
Citation information provided by
Web of Science
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