Hydrogen centers and the conductivity of In2O3 single crystals

Yin, Weikai; Smithe, Kirby; Weiser, Philip; Stavola, Michael; Fowler, W. Beall; Boatner, Lynn A.; Pearton, Stephen J.; Hays, David C.; Koch, Sandro G.

doi:10.1103/PhysRevB.91.075208

Title: Hydrogen centers and the conductivity of In₂O₃ single crystals

Journal Article · Tue Feb 24 00:00:00 EST 2015 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.91.075208· OSTI ID:1286842

Yin, Weikai ^[1]; Smithe, Kirby ^[1]; Weiser, Philip ^[1]; Stavola, Michael ^[1]; Fowler, W. Beall ^[1]; Boatner, Lynn A. ^[2]; Pearton, Stephen J. ^[3]; Hays, David C. ^[3]; Koch, Sandro G. ^[4]

Lehigh Univ., Bethlehem, PA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Univ. of Florida, Gainesville, FL (United States)
Dresden Univ. of Technology (Germany)

A series of infrared absorption experiments and complementary theory have been performed in order to determine the properties of OH and OD centers in In₂O₃ single crystals. Annealing In₂O₃ samples in H₂ or D₂ at temperatures near 450°C produces an n-type layer ≈0.06mm thick with an n-type doping of 1.6×1019 cm^-3. The resulting free-carrier absorption is correlated with an OH center with a vibrational frequency of 3306 cm^-1 that we associate with interstitial H⁺. Additional O-H (O-D) vibrational lines are assigned to metastable configurations of the interstitial H⁺(D⁺) center and complexes of H (D) with In vacancies. In addition, unlike other oxides studied recently where H trapped at an oxygen vacancy is the dominant shallow donor (ZnO and SnO₂, for example), interstitial H⁺ is found to be the dominant H-related shallow donor in In₂O₃.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1286842

Alternate ID(s):: OSTI ID: 1181179

Journal Information:: Physical Review B, Vol. 91, Issue 7; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 32 works

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Diffusivity of the interstitial hydrogen shallow donor in In ₂ O ₃ Qin, Ying; Weiser, Philip; Villalta, Karla Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.4995593	journal	April 2018
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra Stavola, Michael; Fowler, W. Beall Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5011036	journal	April 2018
Structure and vibrational properties of the dominant O-H center in β-Ga ₂ O ₃ Weiser, Philip; Stavola, Michael; Fowler, W. Beall Applied Physics Letters, Vol. 112, Issue 23 https://doi.org/10.1063/1.5029921	journal	June 2018

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Title: Hydrogen centers and the conductivity of In2O3 single crystals

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Title: Hydrogen centers and the conductivity of In₂O₃ single crystals