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Title: Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

Journal Article · · Applied Physics Express
 [1];  [2];  [1];  [1];  [2];  [2];  [3]
  1. The Ohio State Univ., Columbus, OH (United States). Dept of Electrical and Computer Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. The Ohio State Univ., Columbus, OH (United States). Dept of Electrical and Computer Engineering; The Ohio State Univ., Columbus, OH (United States). Dept of Materials Science and Engineering
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The efficiency of ultra violet LEDs has been critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling based p-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs without the need for complex manufacturing methods such as flip chip bonding.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1285956
Report Number(s):
SAND2016-7211J; 646157
Journal Information:
Applied Physics Express, Vol. 9, Issue 5; ISSN 1882-0778
Publisher:
Japan Society of Applied PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

Cited By (13)

Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes journal January 2019
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions journal September 2016
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures journal January 2017
Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes journal February 2017
Tunnel-injected sub-260 nm ultraviolet light emitting diodes journal May 2017
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes journal January 2018
Progress in efficient doping of high aluminum-containing group III-nitrides journal March 2018
Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures journal March 2018
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency journal February 2018
Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates journal December 2018
AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics journal January 2019
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures text January 2016
Tunnel-injected sub-260 nm ultraviolet light emitting diodes text January 2017

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36 MATERIALS SCIENCE