Final Technical Report

Technical Report · Mon Sep 09 00:00:00 EDT 2013

DOI:https://doi.org/10.2172/1274409· OSTI ID:1274409

Chen, Cheng-Po ^[1]; Andarawis, Emad ^[1]; Shaddock, David ^[1]; Yin, Liang ^[1]; Ghandi, Reza ^[1]; Srikrishnan, Kashyap ^[1]; Saia, Richard ^[1]; Patil, Amita ^[1]; Fang, Kun ^[2]; Shen, Zhenzhen ^[2]

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1. GE Global Research, Niskayuna, New York (United States)
2. Auburn Univ., AL (United States)

The development and demonstration in this digital telemetry project has brought SiC-based high temperature electronics to a new level of complexity and integration with the active electronic devices and the packaging materials operating at 300°C for greater than 2000 hours. Our highest level of integration is a 6x6mm die with 474 transistors with the most complex functionality to date. Advances were made in the area of device modeling and fabrication, circuit simulation and design, device testing, and packaging. The technologies developed here would help enable sensor systems in enhanced geothermal systems, as well as other applications with high temperature requirements.

• Research Organization: General Electric
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Geothermal Technologies Office
• DOE Contract Number: EE0002755
• OSTI ID: 1274409
• Report Number(s): DOE-GEGR-02755-1
• Country of Publication: United States
• Language: English

Related Subjects

15 GEOTHERMAL ENERGY
high temperature electronics
wired telemetry
silicon carbide electronics