Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

doi:10.1016/j.jallcom.2015.08.046

Title: Enhanced Thermoelectric Properties of Cu₂ZnSnSe₄ with Ga-doping

Journal Article · Mon Aug 10 00:00:00 EDT 2015 · Journal of Alloys and Compounds

DOI:https://doi.org/10.1016/j.jallcom.2015.08.046· OSTI ID:1265657

Wei, Kaya ^[1]; Beauchemin, Laura ^[1]; Wang, Hsin ^[2]; Porter, Wallace D. ^[2]; Martin, Joshua ^[3]; Nolas, George S. ^[1]

Univ. of South Florida, Tampa, FL (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

Gallium doped Cu₂ZnSnSe₄ quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S²/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Sustainable Transportation. Vehicle Technologies Office (VTO)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265657

Alternate ID(s):: OSTI ID: 1250202

Journal Information:: Journal of Alloys and Compounds, Vol. 650; ISSN 0925-8388

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 32 works

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Quaternary chalcogenides: Promising thermoelectric material and recent progress Wang, Teng; Huo, Taichang; Wang, Hongchao Science China Materials, Vol. 63, Issue 1 https://doi.org/10.1007/s40843-019-9467-2	journal	July 2019
Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu ₂ ZnSnSe ₄ Zhu, Yingcai; Liu, Yong; Tan, Xing AIP Advances, Vol. 8, Issue 4 https://doi.org/10.1063/1.5025482	journal	April 2018
Synthesis, transport properties and electronic structure of p-type Cu _1+x Mn _2−x InTe ₄ ( x = 0, 0.2, 0.3) Hobbis, Dean; Shi, Wencong; Popescu, Adrian Dalton Transactions, Vol. 49, Issue 7 https://doi.org/10.1039/c9dt04069b	journal	January 2020
Polaronic transport in Ag-based quaternary chalcogenides Wei, Kaya; Khabibullin, Artem R.; Stedman, Troy Journal of Applied Physics, Vol. 122, Issue 10 https://doi.org/10.1063/1.5001690	journal	September 2017

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quaternary chalcogenides
thermoelectric properties
gallium doping

Title: Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

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Title: Enhanced Thermoelectric Properties of Cu₂ZnSnSe₄ with Ga-doping