Growth of metal phthalocyanine on deactivated semiconducting surfaces steered by selective orbital coupling

Wagner, Sean R.; Feng, Jiagui; Yoon, Mina; Zhang, Pengpeng; Huang, Bing; Park, Changwon

doi:10.1103/PhysRevLett.115.096101

Title: Growth of metal phthalocyanine on deactivated semiconducting surfaces steered by selective orbital coupling

Journal Article · Tue Aug 25 00:00:00 EDT 2015 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.115.096101· OSTI ID:1263862

Wagner, Sean R. ^[1]; Feng, Jiagui ^[1]; Yoon, Mina ^[2]; Zhang, Pengpeng ^[1]; Huang, Bing ^[2]; Park, Changwon ^[2]

Michigan State Univ., East Lansing, MI (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Using scanning tunneling microscopy and density functional theory, we show that the molecular ordering and orientation of metal phthalocyanine molecules on the deactivated Si surface display a strong dependency on the central transition-metal ion, driven by the degree of orbital hybridization at the heterointerface via selective p – d orbital coupling. As a result, this Letter identifies a selective mechanism for modifying the molecule-substrate interaction which impacts the growth behavior of transition-metal-incorporated organic molecules on a technologically relevant substrate for silicon-based devices.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AC02-05CH11231; SC0006400

OSTI ID:: 1263862

Alternate ID(s):: OSTI ID: 1213101

Journal Information:: Physical Review Letters, Vol. 115, Issue 9; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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