Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

Zalden, Peter; Shu, Michael J.; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W.; Wong, H. -S.  Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M.

doi:10.1103/PhysRevLett.117.067601

Title: Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

Journal Article · Thu Jul 14 00:00:00 EDT 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.117.067601· OSTI ID:1263397

Zalden, Peter; Shu, Michael J.; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W.; Wong, H. -S. Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M.

View Journal Article

Cite

Export

Save

Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC02-76SF00515

OSTI ID:: 1263397

Report Number(s):: SLAC-PUB-16767; PRLTAO; arXiv:1602.01885

Journal Information:: Physical Review Letters, Vol. 117, Issue 6; ISSN 0031-9007

Country of Publication:: United States

Language:: English

References (38)

Phase Change Memory Wong, H. -S. Philip; Raoux, Simone; Kim, SangBum Proceedings of the IEEE, Vol. 98, Issue 12 https://doi.org/10.1109/JPROC.2010.2070050	journal	December 2010
Phase-change materials for rewriteable data storage Wuttig, Matthias; Yamada, Noboru Nature Materials, Vol. 6, Issue 11 https://doi.org/10.1038/nmat2009	journal	November 2007
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices Ielmini, Daniele; Zhang, Yuegang Journal of Applied Physics, Vol. 102, Issue 5 https://doi.org/10.1063/1.2773688	journal	September 2007
Phase change memory technology Burr, Geoffrey W.; Breitwisch, Matthew J.; Franceschini, Michele Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 2 https://doi.org/10.1116/1.3301579	journal	March 2010
Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials Redaelli, A.; Pirovano, A.; Pellizzer, F. IEEE Electron Device Letters, Vol. 25, Issue 10 https://doi.org/10.1109/LED.2004.836032	journal	October 2004
Electronic conduction and switching in chalcogenide glasses Owen, A. E.; Robertson, J. M. IEEE Transactions on Electron Devices, Vol. 20, Issue 2 https://doi.org/10.1109/T-ED.1973.17617	journal	February 1973
Electrical conduction in chalcogenide glasses of phase change memory Nardone, M.; Simon, M.; Karpov, I. V. Journal of Applied Physics, Vol. 112, Issue 7 https://doi.org/10.1063/1.4738746	journal	October 2012
Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel Journal of Applied Physics, Vol. 119, Issue 2 https://doi.org/10.1063/1.4938532	journal	January 2016
Reversible Electrical Switching Phenomena in Disordered Structures Ovshinsky, Stanford R. Physical Review Letters, Vol. 21, Issue 20 https://doi.org/10.1103/PhysRevLett.21.1450	journal	November 1968
High-field electrical transport in amorphous phase-change materials Kaes, Matthias; Le Gallo, Manuel; Sebastian, Abu Journal of Applied Physics, Vol. 118, Issue 13 https://doi.org/10.1063/1.4932204	journal	October 2015
The gradual nature of threshold switching Wimmer, M.; Salinga, M. New Journal of Physics, Vol. 16, Issue 11 https://doi.org/10.1088/1367-2630/16/11/113044	journal	November 2014
Breaking the Speed Limits of Phase-Change Memory Loke, D.; Lee, T. H.; Wang, W. J. Science, Vol. 336, Issue 6088 https://doi.org/10.1126/science.1221561	journal	June 2012
Ultrafast terahertz-induced response of GeSbTe phase-change materials Shu, Michael J.; Zalden, Peter; Chen, Frank Applied Physics Letters, Vol. 104, Issue 25 https://doi.org/10.1063/1.4884816	journal	June 2014
Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial Liu, Mengkun; Hwang, Harold Y.; Tao, Hu Nature, Vol. 487, Issue 7407 https://doi.org/10.1038/nature11231	journal	July 2012
Threshold field of phase change memory materials measured using phase change bridge devices Krebs, Daniel; Raoux, Simone; Rettner, Charles T. Applied Physics Letters, Vol. 95, Issue 8 https://doi.org/10.1063/1.3210792	journal	August 2009
From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials Matsunaga, Toshiyuki; Akola, Jaakko; Kohara, Shinji Nature Materials, Vol. 10, Issue 2 https://doi.org/10.1038/nmat2931	journal	January 2011
How Supercooled Liquid Phase-Change Materials Crystallize: Snapshots after Femtosecond Optical Excitation Zalden, Peter; von Hoegen, Alexander; Landreman, Patrick Chemistry of Materials, Vol. 27, Issue 16 https://doi.org/10.1021/acs.chemmater.5b02011	journal	August 2015
Terahertz field enhancement by a metallic nano slit operating beyond the skin-depth limit Seo, M. A.; Park, H. R.; Koo, S. M. Nature Photonics, Vol. 3, Issue 3 https://doi.org/10.1038/nphoton.2009.22	journal	February 2009
A review of non-linear terahertz spectroscopy with ultrashort tabletop-laser pulses Hwang, Harold Y.; Fleischer, Sharly; Brandt, Nathaniel C. Journal of Modern Optics, Vol. 62, Issue 18 https://doi.org/10.1080/09500340.2014.918200	journal	June 2014
Measurement and calculation of the orientation dependence of terahertz pulse detection in ZnTe Planken, Paul C. M.; Nienhuys, Han-Kwang; Bakker, Huib J. Journal of the Optical Society of America B, Vol. 18, Issue 3 https://doi.org/10.1364/JOSAB.18.000313	journal	January 2001
Numerical Studies on the Electro-Optic Sampling of Relativistic Electron Bunches Casalbuoni, S.; Schlarb, H.; Schmidt, B. Proceedings of the 2005 Particle Accelerator Conference https://doi.org/10.1109/PAC.2005.1591367	conference	January 2005
Refractive index of GaP and its pressure dependence Strössner, K.; Ves, S.; Cardona, M. Physical Review B, Vol. 32, Issue 10 https://doi.org/10.1103/PhysRevB.32.6614	journal	November 1985
Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs Fan, Kebin; Hwang, Harold Y.; Liu, Mengkun Physical Review Letters, Vol. 110, Issue 21 https://doi.org/10.1103/PhysRevLett.110.217404	journal	May 2013
Intense terahertz pulses by four-wave rectification in air Cook, D. J.; Hochstrasser, R. M. Optics Letters, Vol. 25, Issue 16 https://doi.org/10.1364/OL.25.001210	journal	January 2000
Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors Grischkowsky, D.; Keiding, Søren; van Exter, Martin Journal of the Optical Society of America B, Vol. 7, Issue 10 https://doi.org/10.1364/JOSAB.7.002006	journal	January 1990
The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells Oosthoek, J. L. M.; Krebs, D.; Salinga, M. Journal of Applied Physics, Vol. 112, Issue 8 https://doi.org/10.1063/1.4759239	journal	October 2012
Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope Lai, K.; Kundhikanjana, W.; Kelly, M. Review of Scientific Instruments, Vol. 79, Issue 6 https://doi.org/10.1063/1.2949109	journal	June 2008
Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging Kundhikanjana, Worasom; Lai, Keji; Wang, Hailiang Nano Letters, Vol. 9, Issue 11 https://doi.org/10.1021/nl901949z	journal	November 2009
Far infrared and microwave conductivity spectrum of semiconducting Tl2Se·As2Te3 glass Bishop, S. G.; Taylor, P. C.; Mitchell, D. L. Journal of Non-Crystalline Solids, Vol. 5, Issue 4 https://doi.org/10.1016/0022-3093(71)90073-1	journal	March 1971
Contrast in terahertz conductivity of phase-change materials Kadlec, Filip; Kadlec, Christelle; Kužel, Petr Solid State Communications, Vol. 152, Issue 10 https://doi.org/10.1016/j.ssc.2012.02.018	journal	May 2012
Crystallization kinetics of sputter-deposited amorphous AgInSbTe films Njoroge, Walter K.; Wuttig, Matthias Journal of Applied Physics, Vol. 90, Issue 8 https://doi.org/10.1063/1.1405141	journal	October 2001
Resonant bonding in crystalline phase-change materials Shportko, Kostiantyn; Kremers, Stephan; Woda, Michael Nature Materials, Vol. 7, Issue 8 https://doi.org/10.1038/nmat2226	journal	July 2008
Conductive path formation in glasses of phase change memory Simon, M.; Nardone, M.; Karpov, V. G. Journal of Applied Physics, Vol. 108, Issue 6 https://doi.org/10.1063/1.3478713	journal	September 2010
Polarized electroabsorption spectra of amorphous semiconductors Weiser, G.; Dersch, U.; Thomas, P. Philosophical Magazine B, Vol. 57, Issue 6 https://doi.org/10.1080/13642818808208489	journal	June 1988
Evidence of field induced nucleation in phase change memory Karpov, I. V.; Mitra, M.; Kau, D. Applied Physics Letters, Vol. 92, Issue 17 https://doi.org/10.1063/1.2917583	journal	April 2008
Vibrational properties of crystalline Sb ₂ Te ₃ from first principles Sosso, G. C.; Caravati, S.; Bernasconi, M. Journal of Physics: Condensed Matter, Vol. 21, Issue 9 https://doi.org/10.1088/0953-8984/21/9/095410	journal	February 2009
Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses Siegel, J.; Schropp, A.; Solis, J. Applied Physics Letters, Vol. 84, Issue 13 https://doi.org/10.1063/1.1689756	journal	March 2004
Nanosecond threshold switching of GeTe ₆ cells and their potential as selector devices Anbarasu, M.; Wimmer, Martin; Bruns, Gunnar Applied Physics Letters, Vol. 100, Issue 14 https://doi.org/10.1063/1.3700743	journal	April 2012

Cited By (12)

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials Jeong, Young‐Gyun; Bahk, Young‐Mi; Kim, Dai‐Sik Advanced Optical Materials, Vol. 8, Issue 3 https://doi.org/10.1002/adom.201900548	journal	August 2019
Direct Evidence for a Systematic Evolution of Optical Band Gap and Local Disorder in Ag, In Doped Sb ₂ Te Phase Change Material Shukla, Krishna Dayal; Sahu, Smriti; Manivannan, Anbarasu physica status solidi (RRL) - Rapid Research Letters, Vol. 11, Issue 12 https://doi.org/10.1002/pssr.201700273	journal	October 2017
High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 8 https://doi.org/10.1002/pssr.201900105	journal	April 2019
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing Zhang, Wei; Mazzarello, Riccardo; Wuttig, Matthias Nature Reviews Materials, Vol. 4, Issue 3 https://doi.org/10.1038/s41578-018-0076-x	journal	January 2019
Significant Volume Expansion as a Precursor to Ablation and Micropattern Formation in Phase Change Material Induced by Intense Terahertz Pulses Makino, Kotaro; Kato, Kosaku; Takano, Keisuke Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-21275-3	journal	February 2018
Scanning microwave imaging of optically patterned Ge ₂ Sb ₂ Te ₅ Johnston, Scott R.; Ng, Edwin; Fong, Scott W. Applied Physics Letters, Vol. 114, Issue 9 https://doi.org/10.1063/1.5052018	journal	March 2019
First-principles prediction of the native filament:dielectric interfaces for the possible filamentary switching mechanism in chalcogenide selector devices Li, Huanglong; Chen, Wenduo Journal of Applied Physics, Vol. 127, Issue 4 https://doi.org/10.1063/1.5134916	journal	January 2020
Threshold switching dynamics of pseudo-binary GeTe–Sb ₂ Te ₃ phase change memory devices Saxena, Nishant; Manivannan, Anbarasu Journal of Physics D: Applied Physics, Vol. 52, Issue 37 https://doi.org/10.1088/1361-6463/ab2ac3	journal	July 2019
Sub-nanosecond threshold switching dynamics in GeSb ₂ Te ₄ phase change memory device Saxena, Nishant; Manivannan, Anbarasu Journal of Physics D: Applied Physics, Vol. 53, Issue 2 https://doi.org/10.1088/1361-6463/ab4c1b	journal	October 2019
Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers Barraza-Lopez, Salvador; Kaloni, Thaneshwor P.; Poudel, Shiva P. Physical Review B, Vol. 97, Issue 2 https://doi.org/10.1103/physrevb.97.024110	journal	January 2018
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing Rao, Feng; Ding, Keyuan; Zhou, Yuxing Science, Vol. 358, Issue 6369 https://doi.org/10.1126/science.aao3212	journal	November 2017
Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers Barraza-Lopez, Salvador; Kaloni, Thaneshwor P.; Poudel, Shiva P. arXiv https://doi.org/10.48550/arxiv.1709.04581	text	January 2017

Similar Records

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Journal Article · Fri Aug 05 00:00:00 EDT 2016 · Physical Review Letters · OSTI ID:1263397

Zalden, Peter; Shu, Michael J.; Chen, Frank; +16 more

Magnetic phase transitions and electrical switching in Gd5(Sn0.3Ge3.7) induced by magnetic field

Journal Article · Thu Aug 01 00:00:00 EDT 2013 · Journal of Magnetism and Magnetic Materials · OSTI ID:1263397

Levin, E. M.

Picosecond molecular switch based on bidirectional inhibition of photoinduced electron transfer using photogenerated electric fields.

Journal Article · Wed May 27 00:00:00 EDT 1998 · J. Am. Chem. Soc. · OSTI ID:1263397

Gosztola, D; Niemczyk, M P; Wasielewski, M R

Related Subjects

MATSCI
OPTICS
SYNCHRAD

Title: Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

Citation Formats

References (38)

Cited By (12)

Similar Records

Related Subjects