A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

Journal Article · Wed Apr 30 00:00:00 EDT 2014 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/TPEL.2014.2321174· OSTI ID:1261403

Wang, Zhiqiang ^[1]; Shi, Xiaojie ^[2]; Tolbert, Leon M. ^[1]; Wang, Fei Fred ^[1]; Liang, Zhenxian ^[1]; Costinett, Daniel ^[1]; Blalock, Benjamin J. ^[3]

---

1. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Electrical Engineering & Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Transportation Research Center
2. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Electrical Engineering & Computer Science
3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Transportation Research Center

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Facility
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)
• Grant/Contract Number: AC05-00OR22725; EEC-1041877
• OSTI ID: 1261403
• Journal Information: IEEE Transactions on Power Electronics, Vol. 30, Issue 3; ISSN 0885-8993
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Power module
silicon carbide (SiC) MOSFET
silicon-on-insulator (SOI)
thermosensitive electrical parameter (TSEP)