Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices

Aytac, Y.; Olson, B. V.; Kim, J. K.; Shaner, E. A.; Hawkins, S. D.; Klem, J. F.; Flatté, M. E.; Boggess, T. F.

doi:10.1103/physrevapplied.5.054016

Title: Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in $InAs / In (As, Sb)$ Type-II Superlattices

Journal Article · Wed Jun 01 00:00:00 EDT 2016 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.5.054016· OSTI ID:1259474

Aytac, Y. ^[1]; Olson, B. V. ^[2]; Kim, J. K. ^[2]; Shaner, E. A. ^[2]; Hawkins, S. D. ^[2]; Klem, J. F. ^[2]; Flatté, M. E. ^[1]; Boggess, T. F. ^[1]

Univ. of Iowa, Iowa City, IA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1259474

Report Number(s):: SAND2016-5485J; PRAHB2; 641590

Journal Information:: Physical Review Applied, Vol. 5, Issue 5; ISSN 2331-7019

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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References (19)

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Cited By (4)

A designing principle for low dark-current strained layer superlattices Krishnamurthy, S.; Yu, Zhi-Gang Applied Physics Letters, Vol. 110, Issue 2 https://doi.org/10.1063/1.4974031	journal	January 2017
Theoretical study of native point defects in strained-layer superlattice systems Krishnamurthy, S.; Yu, Zhi Gang Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5004176	journal	April 2018
Transition levels of intrinsic defects in type-II InAs/InAs _0.5 Sb _0.5 strained-layer superlattices Miao, Maosheng; Kioussis, Nicholas; Grein, Christoph H. Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5110165	journal	October 2019
Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements Ciura, Lukasz; Kolek, Andrzej; Gomółka, Emilia Semiconductor Science and Technology, Vol. 34, Issue 10 https://doi.org/10.1088/1361-6641/ab3c02	journal	September 2019

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Title: Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in $InAs / In (As, Sb)$ Type-II Superlattices