Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions

Zhang, Xueqiang; Ptasinska, Sylwia

doi:10.1038/srep24848

Title: Electronic and chemical structure of the H₂O/GaN(0001) interface under ambient conditions

Journal Article · Mon Apr 25 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep24848· OSTI ID:1258572

Zhang, Xueqiang ^[1]; Ptasinska, Sylwia ^[2]

Univ. of Notre Dame, IN (United States). Notre Dame Radiation Lab. (NDRL); Dept. of Chemistry and Biochemistry
Univ. of Notre Dame, IN (United States). Notre Dame Radiation Lab. (NDRL); Dept. of Physics

We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H₂O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to H₂O at room temperature. However, the GaN surface work function was slightly reduced due to the adsorption of molecular H₂O and its dissociation products. At elevated temperatures, a negative charge generated on the surface by a vigorous H₂O/GaN interfacial chemistry induced an increase in both the surface work function and upward band bending. We tracked the dissociative adsorption of H₂O onto the GaN(0001) surface by recording the core-level photoemission spectra and obtained the electronic and chemical properties at the H₂O/GaN interface under operando conditions. In conclusion, our results suggest a strong correlation between the electronic and chemical properties of the material surface, and we expect that their evolutions lead to significantly different properties at the electrolyte/ electrode interface in a photoelectrochemical solar cell.

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Research Organization:: Univ. of Notre Dame, IN (United States). Notre Dame Radiation Lab.

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FC02-04ER15533

OSTI ID:: 1258572

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 39 works

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Title: Electronic and chemical structure of the H₂O/GaN(0001) interface under ambient conditions