Ultrafast band engineering and transient spin currents in antiferromagnetic oxides

Gu, Mingqiang; Rondinelli, James M.

doi:10.1038/srep25121

Title: Ultrafast band engineering and transient spin currents in antiferromagnetic oxides

Journal Article · Fri Apr 29 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep25121· OSTI ID:1257759

Gu, Mingqiang ^[1]; Rondinelli, James M. ^[1]

Northwestern Univ., Evanston, IL (United States)

Here, we report a dynamic structure and band engineering strategy with experimental protocols to induce indirect-to-direct band gap transitions and coherently oscillating pure spin-currents in three-dimensional antiferromagnets (AFM) using selective phononic excitations. In the Mott insulator LaTiO₃, we show that a photo-induced nonequilibrium phonon mode amplitude destroys the spin and orbitally degenerate ground state, reduces the band gap by 160 meV and renormalizes the carrier masses. The time scale of this process is a few hundreds of femtoseconds. Then in the hole-doped correlated metallic titanate, we show how pure spin-currents can be achieved to yield spin-polarizations exceeding those observed in classic semiconductors. Last, we demonstrate the generality of the approach by applying it to the non-orbitally degenerate AFM CaMnO₃. These results advance our understanding of electron-lattice interactions in structures out-of-equilibrium and establish a rational framework for designing dynamic phases that may be exploited in ultrafast optoelectronic and optospintronic devices.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012375

OSTI ID:: 1257759

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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