Polarization induced doped transistor
Patent
·
OSTI ID:1255955
A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.
- Research Organization:
- University of Notre Dame du Lac, Notre Dame, IN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000454
- Assignee:
- University of Notre Dame du Lac (Notre Dame, IN)
- Patent Number(s):
- 9,362,389
- Application Number:
- 14/470,569
- OSTI ID:
- 1255955
- Resource Relation:
- Patent File Date: 2014 Aug 27
- Country of Publication:
- United States
- Language:
- English
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