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Title: Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

Journal Article · · Physica Status Solidi. A, Applications and Materials Science
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  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Tohoku Univ., Sendai (Japan). Inst. of Multidisciplinary Research for Advanced Materials (IMRAM)
  3. National Univ. of Singapore (Singapore)
  4. Imperial College, London (United Kingdom)
  5. Tohoku Univ., Sendai (Japan). WPI-Advanced Inst. for Materials Research
  6. Japan Atomic Energy Agency (JAEA), Kouto (Japan)
  7. Akita National College of Technology, Akita (Japan)
  8. National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan). Nanotube Research Center
  9. Rutgers Univ., Piscataway, NJ (United States)

We report valence‐band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real‐time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600 °C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as‐synthesized counterpart.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1254851
Alternate ID(s):
OSTI ID: 1401197
Report Number(s):
LA-UR-15-23672
Journal Information:
Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science; ISSN 1862-6300
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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Cited By (3)

Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction journal April 2019
Active bialkali photocathodes on free-standing graphene substrates journal June 2017
Fine-Tuning the Optoelectronic Properties of Freestanding Borophene by Strain journal November 2017

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