Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Belashchenko, K. D.; Tchernyshyov, O.; Kovalev, Alexey A.; Tretiakov, O. A.

doi:10.1063/1.4944996

Title: Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Journal Article · Wed Mar 30 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944996· OSTI ID:1253329

^[1]; Tchernyshyov, O. ^[2];

^[1]; Tretiakov, O. A. ^[3]

Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
Johns Hopkins Univ., Baltimore, MD (United States)
Tohoku Univ., Sendai (Japan); Far Eastern Federal Univ., Vladivostok (Russia)

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr₂O₃ is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr₂O₃, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr₂O₃. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0014189; FG02-08ER46544

OSTI ID:: 1253329

Alternate ID(s):: OSTI ID: 1244608

Journal Information:: Applied Physics Letters, Vol. 108, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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Finite-size scaling effect on Néel temperature of antiferromagnetic ${Cr}_{2} O_{3}$ (0001) films in exchange-coupled heterostructures Pati, Satya Prakash; Al-Mahdawi, Muftah; Ye, Shujun Physical Review B, Vol. 94, Issue 22 https://doi.org/10.1103/physrevb.94.224417	journal	December 2016
Magnetoelectric control of topological phases in graphene Takenaka, Hiroyuki; Sandhoefner, Shane; Kovalev, Alexey A. Physical Review B, Vol. 100, Issue 12 https://doi.org/10.1103/physrevb.100.125156	journal	September 2019
Magnetoelectric effect of epitaxial Cr ₂ O ₃ thin films with a conducting underlayer electrode Hui, Yajuan; Lin, Weinan; Xie, Qidong Journal of Physics D: Applied Physics, Vol. 52, Issue 24 https://doi.org/10.1088/1361-6463/ab148f	journal	April 2019
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