Methods for resistive switching of memristors

Mickel, Patrick R.; James, Conrad D.; Lohn, Andrew; Marinella, Matthew; Hsia, Alexander H.

Title: Methods for resistive switching of memristors

Patent · Tue May 10 00:00:00 EDT 2016

OSTI ID:1252204

Mickel, Patrick R.; James, Conrad D.; Lohn, Andrew; Marinella, Matthew; Hsia, Alexander H.

The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

View Patent

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 9,336,870

Application Number:: 14/612,958

OSTI ID:: 1252204

Resource Relation:: Patent File Date: 2015 Feb 03

Country of Publication:: United States

Language:: English

References (91)

Physical modeling of voltage-driven resistive switching in oxide RRAM Ielmini, Daniele; Larentis, Stefano; Balatti, Simone 2012 IEEE International Integrated Reliability Workshop (IIRW), 2012 IEEE International Integrated Reliability Workshop Final Report https://doi.org/10.1109/IIRW.2012.6468905	conference	October 2012
Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7 Chuang, Alfred Tung Hua; Chen, Yi-Chou; Chu, Yung-Ching 2011 3rd IEEE International Memory Workshop (IMW) https://doi.org/10.1109/IMW.2011.5873240	conference	May 2011
SPICE modeling of memristors Abdalla, Hisham; Pickett, Matthew D. 2011 IEEE International Symposium on Circuits and Systems (ISCAS), 2011 IEEE International Symposium of Circuits and Systems (ISCAS) https://doi.org/10.1109/ISCAS.2011.5937942	conference	May 2011
Understanding switching variability and random telegraph noise in resistive RAM Ambrogio, S.; Balatti, S.; Cubeta, A. 2013 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2013.6724732	conference	December 2013
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Balatti, S.; Larentis, S.; Gilmer, D. C. Advanced Materials, Vol. 25, Issue 10, p. 1474-1478 https://doi.org/10.1002/adma.201204097	journal	January 2013
Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance Brumbach, Michael T.; Mickel, Patrick R.; Lohn, Andrew J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 5 https://doi.org/10.1116/1.4893929	journal	September 2014
Overview of candidate device technologies for storage-class memory Burr, G. W.; Kurdi, B. N.; Scott, J. C. IBM Journal of Research and Development, Vol. 52, Issue 4.5 https://doi.org/10.1147/rd.524.0449	journal	July 2008
Theory of the oxidation of metals Cabrera, N.; Mott, N. F. Reports on Progress in Physics, Vol. 12, Issue 1 https://doi.org/10.1088/0034-4885/12/1/308	journal	January 1949
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor Chang, Ting; Jo, Sung-Hyun; Lu, Wei ACS Nano, Vol. 5, Issue 9 https://doi.org/10.1021/nn202983n	journal	August 2011
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories Chen, Jui-Yuan; Hsin, Cheng-Lun; Huang, Chun-Wei Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl4015638	journal	July 2013
Memristive devices and systems Chua, L. O. Proceedings of the IEEE, Vol. 64, Issue 2 https://doi.org/10.1109/PROC.1976.10092	journal	January 1976
Memristor-The missing circuit element Chua, L. IEEE Transactions on Circuit Theory, Vol. 18, Issue 5 https://doi.org/10.1109/TCT.1971.1083337	journal	January 1971
Emerging non-volatile memories: magnetic and resistive technologies Dieny, B.; Jagadish, Chennupati Journal of Physics D: Applied Physics, Vol. 46, Issue 7 https://doi.org/10.1088/0022-3727/46/7/070301	journal	February 2013
Periodicity and dissipativity for memristor-based mixed time-varying delayed neural networks via differential inclusions Duan, Lian; Huang, Lihong Neural Networks, Vol. 57, p. 12-22 https://doi.org/10.1016/j.neunet.2014.05.002	journal	September 2014
Programmable CMOS/Memristor Threshold Logic Gao, Ligang; Alibart, Fabien; Strukov, Dmitri B. IEEE Transactions on Nanotechnology, Vol. 12, Issue 2 https://doi.org/10.1109/TNANO.2013.2241075	journal	March 2013
An innovative sensing architecture for multilevel Flash memory Gao, Xiao-Min; Wang, Yuan; He, Yan-Dong 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) https://doi.org/10.1109/ICSICT.2012.6467797	conference	October 2012
Inside story of ferroelectric memories Garcia, Vincent; Bibes, Manuel Nature, Vol. 483, Issue 7389 https://doi.org/10.1038/483279a	journal	March 2012
Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance Hopkins, Patrick E. ISRN Mechanical Engineering, Vol. 2013 https://doi.org/10.1155/2013/682586	journal	January 2013
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM Ielmini, Daniele; Nardi, Federico; Balatti, Simone IEEE Transactions on Electron Devices, Vol. 59, Issue 8 https://doi.org/10.1109/TED.2012.2199497	journal	August 2012
Reliability issues and modeling of Flash and post-Flash memory (Invited Paper) Ielmini, Daniele Microelectronic Engineering, Vol. 86, Issue 7-9, p. 1870-1875 https://doi.org/10.1016/j.mee.2009.03.054	journal	July 2009
Integration of nanoscale memristor synapses in neuromorphic computing architectures Indiveri, Giacomo; Linares-Barranco, Bernabé; Legenstein, Robert Nanotechnology, Vol. 24, Issue 38 https://doi.org/10.1088/0957-4484/24/38/384010	journal	September 2013
Nanoscale Memristor Device as Synapse in Neuromorphic Systems Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit Nano Letters, Vol. 10, Issue 4, p. 1297-1301 https://doi.org/10.1021/nl904092h	journal	April 2010
Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon Ju, Sheng-Hong; Liang, Xin-Gang Journal of Applied Physics, Vol. 113, Issue 5 https://doi.org/10.1063/1.4790178	journal	February 2013
Memristor-based multilevel memory Kim, Hyongsuk; Sah, Maheshwar Pd.; Yang, Changju 2010 12th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2010) https://doi.org/10.1109/CNNA.2010.5430320	conference	February 2010
A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications Kim, Kuk-Hwan; Gaba, Siddharth; Wheeler, Dana Nano Letters, Vol. 12, Issue 1 https://doi.org/10.1021/nl203687n	journal	December 2011
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film Kim, Kyung Min; Hwang, Cheol Seong Applied Physics Letters, Vol. 94, Issue 12 https://doi.org/10.1063/1.3108088	journal	March 2009
TEAM: ThrEshold Adaptive Memristor Model Kvatinsky, Shahar; Friedman, Eby G.; Kolodny, Avinoam IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 60, Issue 1 https://doi.org/10.1109/TCSI.2012.2215714	journal	January 2013
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
Filament diffusion model for simulating reset and retention processes in RRAM Larentis, S.; Cagli, C.; Nardi, F. Microelectronic Engineering, Vol. 88, Issue 7, p. 1119-1123 https://doi.org/10.1016/j.mee.2011.03.055	journal	July 2011
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling Larentis, Stefano; Nardi, Federico; Balatti, Simone IEEE Transactions on Electron Devices, Vol. 59, Issue 9 https://doi.org/10.1109/TED.2012.2202320	journal	September 2012
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Lee, H. Y.; Chen, P. S.; Wu, T. Y. 2008 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2008.4796677	conference	December 2008
Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications Lee, Joonmyoung 2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2010.5703393	conference	December 2010
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo Nature Materials, Vol. 10, Issue 8, p. 625-630 https://doi.org/10.1038/nmat3070	journal	July 2011
A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation Li, Haitong; Huang, Peng; Gao, Bin IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2293354	journal	February 2014
Complementary resistive switches for passive nanocrossbar memories Linn, Eike; Rosezin, Roland; Kügeler, Carsten Nature Materials, Vol. 9, Issue 5 https://doi.org/10.1038/nmat2748	journal	April 2010
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode Liu, Qi; Long, Shibing; Lv, Hangbing ACS Nano, Vol. 4, Issue 10 https://doi.org/10.1021/nn1017582	journal	September 2010
A CMOS Compatible, Forming Free TaO_x ReRAM Lohn, A. J.; Stevens, J. E.; Mickel, P. R. ECS Transactions, Vol. 58, Issue 5, p. 59-65 https://doi.org/10.1149/05805.0059ecst	journal	August 2013
Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J. Journal of Applied Physics, Vol. 115, Issue 23, Article No. 234507 https://doi.org/10.1063/1.4885045	journal	June 2014
Degenerate resistive switching and ultrahigh density storage in resistive memory Lohn, Andrew J.; Mickel, Patrick R.; James, Conrad D. Applied Physics Letters, Vol. 105, Issue 10, Article No. 103501 https://doi.org/10.1063/1.4895526	journal	September 2014
Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J. Applied Physics Letters, Vol. 103, Issue 17, Article No. 173503 https://doi.org/10.1063/1.4826277	journal	October 2013
Mechanism of electrical shorting failure mode in resistive switching Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J. Journal of Applied Physics, Vol. 116, Issue 3, Article No. 034506 https://doi.org/10.1063/1.4890635	journal	July 2014
Modeling of filamentary resistive memory by concentric cylinders with variable conductivity Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J. Applied Physics Letters, Vol. 105, Issue 18, Article No. 183511 https://doi.org/10.1063/1.4901351	journal	November 2014
Optimizing TaO_x memristor performance and consistency within the reactive sputtering “forbidden region” Lohn, Andrew J.; Stevens, James E.; Mickel, Patrick R. Applied Physics Letters, Vol. 103, Issue 6, Article No. 063502 https://doi.org/10.1063/1.4817927	journal	August 2013
Impact of Joule heating on the microstructure of nanoscale TiO ₂ resistive switching devices Meng Lu, Yi; Noman, Mohammad; Picard, Yoosuf N. Journal of Applied Physics, Vol. 113, Issue 16 https://doi.org/10.1063/1.4803033	journal	April 2013
A read-monitored write circuit for 1T1M multi-level memristor memories Manem, Harika; Rose, Garrett S. 2011 IEEE International Symposium on Circuits and Systems (ISCAS), 2011 IEEE International Symposium of Circuits and Systems (ISCAS) https://doi.org/10.1109/ISCAS.2011.5938207	conference	May 2011
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor Miao, Feng; Strachan, John Paul; Yang, J. Joshua Advanced Materials, Vol. 23, Issue 47, p. 5633-5640 https://doi.org/10.1002/adma.201103379	journal	November 2011
Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors Miao, Feng; Yi, Wei; Goldfarb, Ilan ACS Nano, Vol. 6, Issue 3, p. 2312-2318 https://doi.org/10.1021/nn2044577	journal	February 2012
A physical model of switching dynamics in tantalum oxide memristive devices Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung Applied Physics Letters, Vol. 102, Issue 22, Article No. 223502 https://doi.org/10.1063/1.4809530	journal	June 2013
Detection and characterization of multi-filament evolution during resistive switching Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J. Applied Physics Letters, Vol. 105, Issue 5, Article No. 053503 https://doi.org/10.1063/1.4892471	journal	August 2014
Isothermal Switching and Detailed Filament Evolution in Memristive Systems Mickel, Patrick R.; Lohn, Andrew J.; James, Conrad D. Advanced Materials, Vol. 26, Issue 26, p. 4486-4490 https://doi.org/10.1002/adma.201306182	journal	April 2014
Memristive switching: physical mechanisms and applications Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J. Modern Physics Letters B, Vol. 28, Issue 10, Article No. 1430003 https://doi.org/10.1142/S0217984914300038	journal	April 2014
Multilayer memristive/memcapacitive devices with engineered conduction fronts Mickel, Patrick R.; James, Conrad D. The European Physical Journal Applied Physics, Vol. 62, Issue 3, Article No. 30102 https://doi.org/10.1051/epjap/2013130059	journal	June 2013
Cramming More Components Onto Integrated Circuits Moore, G.E. Proceedings of the IEEE, Vol. 86, Issue 1, p. 82-85 https://doi.org/10.1109/JPROC.1998.658762	journal	January 1998
Memristor-Based Chaotic Circuits Muthuswamy, Bharathwaj; Kokate, PrachetaP IETE Technical Review, Vol. 26, Issue 6 https://doi.org/10.4103/0256-4602.57827	journal	January 2009
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study Nardi, Federico; Larentis, Stefano; Balatti, Simone IEEE Transactions on Electron Devices, Vol. 59, Issue 9 https://doi.org/10.1109/TED.2012.2202319	journal	September 2012
Exploring variability and reliability of multi-level STT-MRAM cells Panagopoulos, Georgios; Augustine, Charles; Fong, Xuanyao 2012 70th Annual Device Research Conference (DRC), 70th Device Research Conference https://doi.org/10.1109/DRC.2012.6257003	conference	June 2012
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure Park, Gyeong-Su; Kim, Young Bae; Park, Seong Yong Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3382	journal	September 2013
Resistive switching characteristics of ultra-thin TiO_x Park, Jubong; Jung, Seungjae; Lee, Joonmyoung Microelectronic Engineering, Vol. 88, Issue 7, p. 1136-1139 https://doi.org/10.1016/j.mee.2011.03.050	journal	July 2011
Experimental demonstration of associative memory with memristive neural networks Pershin, Yuriy V.; Di Ventra, Massimiliano Neural Networks, Vol. 23, Issue 7, p. 881-886 https://doi.org/10.1016/j.neunet.2010.05.001	journal	September 2010
A scalable neuristor built with Mott memristors Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley Nature Materials, Vol. 12, Issue 2 https://doi.org/10.1038/nmat3510	journal	December 2012
Switching dynamics in titanium dioxide memristive devices Pickett, Matthew D.; Strukov, Dmitri B.; Borghetti, Julien L. Journal of Applied Physics, Vol. 106, Issue 7 https://doi.org/10.1063/1.3236506	journal	October 2009
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state Puglisi, Francesco M.; Pavan, Paolo; Padovani, Andrea ESSDERC 2012 - 42nd European Solid State Device Research Conference, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) https://doi.org/10.1109/ESSDERC.2012.6343386	conference	September 2012
HP Memristor mathematical model for periodic signals and DC Radwan, A. G.; Zidan, M. Affan; Salama, K. N. 2010 53rd IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) https://doi.org/10.1109/MWSCAS.2010.5548670	conference	August 2010
An Energy-Efficient Memristive Threshold Logic Circuit Rajendran, Jeyavijayan; Manem, Harika; Karri, Ramesh IEEE Transactions on Computers, Vol. 61, Issue 4 https://doi.org/10.1109/TC.2011.26	journal	April 2012
Reactive sputtering of substoichiometric Ta₂O_x for resistive memory applications Stevens, James E.; Lohn, Andrew J.; Decker, Seth A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2, Article No. 021501 https://doi.org/10.1116/1.4828701	journal	March 2014
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors Strachan, John Paul; Torrezan, Antonio C.; Medeiros-Ribeiro, Gilberto Nanotechnology, Vol. 22, Issue 50 https://doi.org/10.1088/0957-4484/22/50/505402	journal	November 2011
Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K Stranz, A.; Kähler, J.; Waag, A. Journal of Electronic Materials, Vol. 42, Issue 7 https://doi.org/10.1007/s11664-013-2508-0	journal	March 2013
Exponential ionic drift: fast switching and low volatility of thin-film memristors Strukov, Dmitri B.; Williams, R. Stanley Applied Physics A, Vol. 94, Issue 3 https://doi.org/10.1007/s00339-008-4975-3	journal	November 2008
The missing memristor found Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R. Nature, Vol. 453, Issue 7191 https://doi.org/10.1038/nature06932	journal	May 2008
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors Strukov, Dmitri B.; Alibart, Fabien; Stanley Williams, R. Applied Physics A, Vol. 107, Issue 3 https://doi.org/10.1007/s00339-012-6902-x	journal	March 2012
Thermal Conductivity of Titanium Carbide, Zirconium Carbide, and Titanium Nitride at High Temperatures Taylor, R. E.; Morreale, J. Journal of the American Ceramic Society, Vol. 47, Issue 2, p. 69-73 https://doi.org/10.1111/j.1151-2916.1964.tb15657.x	journal	February 1964
Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM Terai, Masayuki; Sakotsubo, Yukihiro; Saito, Yukihiro IEEE Electron Device Letters https://doi.org/10.1109/LED.2010.2068033	journal	November 2010
Sub-nanosecond switching of a tantalum oxide memristor Torrezan, Antonio C.; Strachan, John Paul; Medeiros-Ribeiro, Gilberto Nanotechnology, Vol. 22, Issue 48 https://doi.org/10.1088/0957-4484/22/48/485203	journal	November 2011
Nanoionics-based resistive switching memories Waser, Rainer; Aono, Masakazu Nature Materials, Vol. 6, Issue 11, p. 833-840 https://doi.org/10.1038/nmat2023	journal	November 2007
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
Retention Model for High-Density ReRAM Wei, Z.; Takagi, T.; Kanzawa, Y. 2012 4th IEEE International Memory Workshop (IMW) https://doi.org/10.1109/IMW.2012.6213638	conference	May 2012
Metal–Oxide RRAM Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970 https://doi.org/10.1109/JPROC.2012.2190369	journal	June 2012
Engineering nonlinearity into memristors for passive crossbar applications Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D. Applied Physics Letters, Vol. 100, Issue 11, Article No. 113501 https://doi.org/10.1063/1.3693392	journal	March 2012
Memristive devices for computing Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R. Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24 https://doi.org/10.1038/nnano.2012.240	journal	January 2013
Metal oxide memories based on thermochemical and valence change mechanisms Yang, J. Joshua; Inoue, Isao H.; Mikolajick, Thomas MRS Bulletin, Vol. 37, Issue 2, p. 131-137 https://doi.org/10.1557/mrs.2011.356	journal	February 2012
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory Yu, Shimeng; Wu, Yi; Wong, H. -S. Philip Applied Physics Letters, Vol. 98, Issue 10 https://doi.org/10.1063/1.3564883	journal	March 2011
Nanometer-Scale ${\rm HfO}_{x}$ RRAM Zhang, Zhiping; Wu, Yi; Wong, H. -S. Philip IEEE Electron Device Letters, Vol. 34, Issue 8 https://doi.org/10.1109/LED.2013.2265404	journal	August 2013
Method and apparatus for modeling memristor devices Pino, Robinson E.; Bohl, James W. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8249838 US Patent Document 8,249,838	patent	August 2012
Memory cell with resistance-switching layers and lateral arrangement Kreupl, Franz; Shrivastava, Ritu https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8395926 US Patent Document 8,395,926	patent	March 2013
Semiconductor memristor devices Williams, R. Stanley; Yang, Jianhua; Stewart, Duncan https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8450711 US Patent Document 8,450,711	patent	May 2013
Passive electrically switchable circuit element having improved tunability and method for its manufacture Mickel, Patrick R.; James, Conrad D. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8835272 US Patent Document 8,835,272	patent	September 2014
Memristor using a transition metal nitride insulator Stevens, James E.; Marinella, Matthew; Lohn, Andrew https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8872246 US Patent Document 8,872,246	patent	October 2014
Thin-film solar cell module Shimizu, Akira https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110005572 US Patent Application 12/918130; 20110005572	patent-application	January 2011
Method Of Forming A Chalcogenide Material, Methods Of Forming A Resistive Random Access Memory Device Including A Chalcogenide Material, And Random Access Memory Devices Including A Chalcogenide Material Quick, Timothy https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120104347 US Patent Application 12/917930; 20120104347	patent-application	May 2012
Memristor Cell Structures for High Density Arrays Yang, Jianhua; Zhang, Minxian Max; Ribeiro, Gilberto Medeiros https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20140027705 US Patent Application 13/560935; 20140027705	patent-application	January 2014
Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film Avanzino, Steven C.; Tran, Minh Quoc https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7129133 US Patent Document 7,129,133	patent	October 2006

Similar Records

Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Journal Article · Tue Sep 22 00:00:00 EDT 2020 · Advanced Materials · OSTI ID:1252204

Li, Yiyang; Fuller, Elliot J.; Sugar, Joshua D.; +8 more

Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration

Journal Article · Mon Mar 28 00:00:00 EDT 2022 · Advanced Electronic Materials · OSTI ID:1252204

Subramanian, Ashwanth; Tiwale, Nikhil; Kisslinger, Kim; +1 more

Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

Journal Article · Thu Feb 28 00:00:00 EST 2019 · ACS Applied Materials and Interfaces · OSTI ID:1252204

Lee, Jihang; Schell, William; Zhu, Xiaojian; +2 more

Related Subjects

97 MATHEMATICS AND COMPUTING
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS

Title: Methods for resistive switching of memristors

Citation Formats

References (91)

Similar Records

Related Subjects